Infineon FZ1800R17HP4B29BOSA2

Name: Infineon FZ1800R17HP4B29BOSA2
Brand: Infineon
SKU: FZ1800R17HP4B29BOSA2

Insulated Gate Bipolar Transistor, 1800A I(C), 1700V V(BR)CES, N-Channel

$ 1,026.86

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Distributor		SKU		Min	Pkg
Rochester Electronics		FZ1800R17HP4B29BOSA2	214			956.57	956.57	899.18	841.78	841.78	9h
Avnet		FZ1800R17HP4B29BOSA2	0	1		1,142	1,031	999.62	999.62	999.62	1d
Arrow Electronics		FZ1800R17HP4B29BOSA2	0	1		1,102	1,091	1,058	1,027	1,017
Microchip USA		FZ1800R17HP4B29BOSA2	342	1	Bulk	1,050	1,050	1,050	1,050	1,050	2d
Verical	6	FZ1800R17HP4B29BOSA2	34	1		1,196	1,196	1,124	1,052	1,052

Inventory History

3 month trend: -1.38%

CAD Models

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Datasheets & Documents

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Infineon

Datasheet1 page12 years ago

IHS

iiiC

_legacy Avnet

Inventory History

3 month trend:

-1.38%

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Country of OriginHungary

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-06-23

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

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Descriptions

Descriptions of Infineon FZ1800R17HP4B29BOSA2 provided by its distributors.

Insulated Gate Bipolar Transistor, 1800A I(C), 1700V V(BR)CES, N-Channel

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1700 V IHM B 190 mm single switch IGBT Module with soft-switching Trench-IGBT4, bigger housing, AlSiC base-plate and enlarged diode - The best solution for your traction and industry applications, AG-IHMB190-1-9, RoHS

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1700V IHMB 190mm single switch IGBT Module with soft-switching Trench-IGBT4, bigger housing, AlSiC base-plate and enlarged diode - The best solution for your traction and industry applications. | Summary of Features: Extended Operation Temperature T vj op; Enlarged Diode for regenerative operation; Low V CEsat; 4kV AC 1min Insulation; AlSiC Base Plate for increasing Thermal Cycling Capability; Package with CTI > 400; High Creepage and Clearance Distances; High Power and Thermal Cycling Capability; UL recognised | Benefits: High Power Density; Standardized housing | Target Applications: drives; wind; traction; cav

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