Infineon FP25R12W2T7BPSA1
$ 32.521
Production
Inventory History
3 month trend: -14.09%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon FP25R12W2T7BPSA1.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2020-06-12
Lifecycle StatusProduction (Last Updated: 4 months ago)
Descriptions
Descriptions of Infineon FP25R12W2T7BPSA1 provided by its distributors.
Trans IGBT Module N-CH 1200V 25A 35-Pin Tray
Insulated Gate Bipolar Transistor, 1200V V(BR)CES
IGBT MODULE 1200V 25A AG-EASY2B
Converter-Brake-Inv 1200V 10A EASY1B
Igbt, Pim, 1.2Kv, 25A, Module; Continuous Collector Current:25A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:20Mw; Operating Temperature Max:175°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Infineon Technologies FP25R12W2T7BPSA1
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -14.09%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Technical
Collector Emitter Saturation Voltage1.74 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current25 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Min Operating Temperature-40 °C
Turn-Off Delay Time190 ns
Turn-On Delay Time35 ns
Dimensions
Height12.35 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon FP25R12W2T7BPSA1.