Infineon FP25R12W2T4B11BOMA1

Name: Infineon FP25R12W2T4B11BOMA1
Brand: Infineon
SKU: FP25R12W2T4B11BOMA1

Trans IGBT Module N-CH 1200V 39A 175W 23-Pin EASY2B-2 Tray

$ 29.795

Production

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Distributor		SKU		Min	Pkg
Newark		FP25R12W2T4B11BOMA1	27	1		46.750	37.980	32.630	30.690	30.690
Arrow Electronics	2	FP25R12W2T4B11BOMA1	13	1		45.622	41.288	41.288	41.288	41.288
Rutronik		IGBT3223	15	15				36.050	36.050	36.050	22h
Rochester Electronics		FP25R12W2T4B11BOMA1	20					29.790	26.660	25.090	1d
DigiKey		FP25R12W2T4B11BOMA1-ND	50	1	Tray	45.390	45.390	32.617	29.795	29.795

Inventory History

3 month trend: +11.59%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon FP25R12W2T4B11BOMA1.

Infineon

Datasheet1 page11 years ago

IHS

element14 APAC

Farnell

Newark

Inventory History

3 month trend:

+11.59%

CAD Models

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Supply Chain

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-06-25

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

Descriptions

Descriptions of Infineon FP25R12W2T4B11BOMA1 provided by its distributors.

Trans IGBT Module N-CH 1200V 39A 175W 23-Pin EASY2B-2 Tray

Verical

Igbt Module; Transistor, Polaridad:Canal N; Corriente De Colector Dc:25A; Tensión De Saturación Colector-Emisor Vce(On):1.2Kv; Disipación De Potencia Pd:175W; Tensión Colector Emisor V(Br)Ceo:1.2Kv; Núm. De Contactos:23 |Infineon FP25R12W2T4_B11

Newark

IGBT, LOW POW, 1200V, 25A, EASYPIM; Transistor Polarity:N Channel; DC Collector Current:25A; Collector Emitter Voltage Vces:1.85V; Power Dissipation Pd:175W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:23; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:175W

element14 APAC

EasyPIM™ 2B 1200 V, 25 A reverse conducting PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology. Also available with Thermal Interface Material or as variation with soldering connection technology: FP25R12W2T4.Smaller inverter size can be realized by replacing with the FP25R12W1T7_B11 an EasyPIM™1B module with TRENCHSTOP™ IGBT7.

Infineon