Infineon FP100R12KT4B11BOSA1

Name: Infineon FP100R12KT4B11BOSA1
Brand: Infineon
SKU: FP100R12KT4B11BOSA1

IGBT-MODULE Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel

$ 97.723

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Distributor	SKU		Min	Pkg
Arrow Electronics	FP100R12KT4B11BOSA1	10	1		197.31	197.31	197.31	197.31	197.31
Rochester Electronics	FP100R12KT4B11BOSA1	47					94.520	84.570	79.590	2h
DigiKey	FP100R12KT4B11BOSA1-ND	27	1	Tray	117.47	94.509	94.509	94.509	94.509
Avnet	FP100R12KT4B11BOSA1	0	10			116.44	102.83	100.94	100.94	1d
Farnell	FP100R12KT4B11BOSA1	0	1		133.58*	130.09*	130.09*	130.09*	130.09*	2h

Inventory History

3 month trend: +57.14%

CAD Models

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Datasheets & Documents

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Infineon

Datasheet1 page11 years ago

IHS

Farnell

Inventory History

3 month trend:

+57.14%

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Country of OriginHungary

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-11-23

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

Descriptions

Descriptions of Infineon FP100R12KT4B11BOSA1 provided by its distributors.

IGBT-MODULE Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel

ComSIT Distribution GmbH

Igbt, Module, N-Ch, 1.2Kv, 100A; Transistor Polarity:N Channel; Dc Collector Current:100A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:515W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes |Infineon FP100R12KT4B11BOSA1

Newark

EconoPIM™3 1200 V, 100 A three-phase IGBT module with fast TRENCHSTOP™ IGBT4, Emitter Controlled Diode, NTC and PressFIT contact technology. The Power Integrated Modules (PIM) with integration of rectifier and brake chopper enables system cost savings. Also available as variation with soldering connection technology: FP100R12KT4

Infineon