Infineon DDB6U50N16W1RBPSA1

Name: Infineon DDB6U50N16W1RBPSA1
Brand: Infineon
SKU: DDB6U50N16W1RBPSA1

Trans IGBT Module N-CH 1200V 50A 26-Pin Tray

$ 20.105

Production

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Distributor	SKU		Min
Avnet	DDB6U50N16W1RBPSA1	24	1	19.866	19.136	18.856	18.856	18.856	3d
Arrow Electronics	DDB6U50N16W1RBPSA1	240	1	5.629	5.602	5.602	5.602	5.602
Rochester Electronics	DDB6U50N16W1RBPSA1	23				21.220	18.990	17.870	7h
Newark	DDB6U50N16W1RBPSA1	0	1	33.910	26.470	22.460	21.860	21.860
Farnell	DDB6U50N16W1RBPSA1	0	1	39.177*	26.348*	25.293*	25.293*	25.293*	7h

Inventory History

3 month trend: -0.67%

CAD Models

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Alternate Parts

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Datasheets & Documents

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TME

Datasheet13 pages4 years ago

Inventory History

3 month trend:

-0.67%

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Country of OriginGermany

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2022-03-21

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

Descriptions

Descriptions of Infineon DDB6U50N16W1RBPSA1 provided by its distributors.

Trans IGBT Module N-CH 1200V 50A 26-Pin Tray

Verical

Diode Module, 1.6 kV, 50 A, 960 mV, Bridge, Module, 26 Pins

Avnet

IGBT MODULE 1200V 50A AG-EASY1B

DigiKey

Infineon DDB6U50N16W1RBPSA1 整流桥模块

RS APAC

Insulated Gate Bipolar Transistor

IHS

Diode Module, 1.6Kv, 50A, Module; Repetitive Peak Reverse Voltage:1.6Kv; Average Forward Current:50A; Forward Voltage Max:960Mv; Diode Module Configuration:Bridge; Diode Case Style:Module; No. Of Pins:26Pins; Diode Mounting:Panel Rohs Compliant: Yes |Infineon Technologies DDB6U50N16W1RBPSA1

Newark