Infineon BSZ028N04LSATMA1

Name: Infineon BSZ028N04LSATMA1
Brand: Infineon
SKU: BSZ028N04LSATMA1

N-Ch MOSFET 63W 40V 20V 1.2V 45nC 2.2mΩ 40A TSDSON-8 SMD, Adhesive Mount 3.3mm × 3.3mm × 1.1mm

$ 0.555

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Distributor

SKU

Min

Pkg

Bulk Pricing

Newark

BSZ028N04LSATMA1

1,030

Cut Tape

USD

Rochester Electronics

USD

448-BSZ028N04LSATMA1CT-ND

4,452

Cut Tape

USD

Tape & Reel

USD

USD

3 month trend: -14.21%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon BSZ028N04LSATMA1.

IHS

Datasheet11 pages0 years ago

TME

Inventory History

3 month trend:

-14.21%

CAD Models

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Supply Chain

Country of OriginGermany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-11-12

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Details

Descriptions

Descriptions of Infineon BSZ028N04LSATMA1 provided by its distributors.

N-Ch MOSFET 63W 40V 20V 1.2V 45nC 2.2mΩ 40A TSDSON-8 SMD, Adhesive Mount 3.3mm × 3.3mm × 1.1mm

Unikeyic (ICkey)

BSZ028N04LS Series 40 V 21 A OptiMOSTM Power-MOSFET - TSDSON-8 FL, PG-TSDSON-8, RoHS

Infineon SCT

MOSFET Devices; INFINEON; BSZ028N04LS; 40 V; 40 A; 20 V; 63 W

Maritex

Trans MOSFET N-CH 40V 21A 8-Pin TSDSON EP T/R

Verical

MOSFET N-CH 40V 21A/40A TSDSON "N-Channel 40 V 21A (Ta), 40A (Tc) 2.1W (Ta), 63W (Tc) Surface Mount PG-TSDSON-8-FL"

Eurochip Technologies LTD

Power Field-Effect Transistor, 21A I(D), 40V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET, N-CH, 40V, 40A, 150DEG C, 63W;

Newark

Infineon BSZ028N04LSATMA1 MOSFET

RS APAC

N-CH 40V 40A 2,8mOhm TSDSON-8FL

Rutronik

OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter.

Infineon