Infineon BSC007N04LS6ATMA1

Mosfet TRENCH 40V N channel 0.7mohm Power pack 5x6 PG-TDSON-8
$ 1.852
Production
Manufacturer PageDatasheet

Price and Stock

See all price breaks
DistributorSKUMinPkg
AvnetBSC007N04LS6ATMA15,0005K
23h
Newark
2
BSC007N04LS6ATMA15631Cut Tape
DigiKey
3
BSC007N04LS6ATMA1CT-ND3,3391Cut Tape
Arrow Electronics
2
BSC007N04LS6ATMA18,8131
Future Electronics
2
BSC007N04LS6ATMA105KTape & Reel

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon BSC007N04LS6ATMA1.

IHS

Datasheet12 pages0 years ago

TME

Inventory History

3 month trend:
-62.45%
Powered bySpectra logo

CAD Models

Download Infineon BSC007N04LS6ATMA1 symbol, footprint, and 3D STEP models from our trusted partners.

sourceeCADmCADFILES
Component Search Engine
SymbolFootprint
3DDownload
EE Concierge
SymbolFootprint
SnapEDA
SymbolFootprint
Download
Ultra Librarian
SymbolFootprint
Download
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginAustria, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2018-07-31
Lifecycle StatusProduction (Last Updated: 1 month ago)

Descriptions

Descriptions of Infineon BSC007N04LS6ATMA1 provided by its distributors.

Mosfet TRENCH 40V N channel 0.7mohm Power pack 5x6 PG-TDSON-8
Future Electronics
N-Channel 40V 100A 2.3V @ 250uA 0.7mΩ @ 50A,10V 188W TDSON-8 FL MOSFET RoHS
Jak Electronics
Trans MOSFET N-CH 40V 48A 8-Pin TDSON EP T/R
Verical
20V 2.3V 94nC 1N 40V 700¦Ì¦¸@ 10V,50A 100A 8.4nF@ 20V TDSON-8
UnikeyIC
Power Field-Effect Transistor, 319A I(D), 40V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
MOSFET, N-CH, 40V, 100A, TDSON;
Farnell
N-CH 40V 100A 0.7mOhm TDSON-8FL
Rutronik
Compliant 1 mm 3 W 1 8 ns 40 ns 175 °C
Augswan
FET Input Operational Amplifier
Weyland Electronics Group Pte. Ltd.
Mosfet, N-Ch, 40V, 100A, Tdson; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.3V Rohs Compliant: Yes |Infineon Technologies BSC007N04LS6ATMA1
Newark
The OptiMOS™ 6 power MOSFET 40 V family is optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits.Improvements in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on) x Qg and Qgd) enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.
Infineon

Images

RS
TME
LZChips

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • BSC007N04LS6
  • SP001629650