Infineon BFS481H6327XTSA1

Name: Infineon BFS481H6327XTSA1
Brand: Infineon
SKU: BFS481H6327XTSA1

BFS481 Series 20 V 20 mA Low Noise Silicon Bipolar RF Transistor - SOT-363

$ 0.271

NRND

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Distributor		SKU		Min	Pkg
Avnet		BFS481H6327XTSA1	3,000	3K						0.234	8h
Newark		BFS481H6327XTSA1	80	1	Cut Tape	0.665	0.495	0.407	0.361	0.361
Arrow Electronics		BFS481H6327XTSA1	980	1		0.216	0.216	0.216	0.216	0.216
Rochester Electronics		BFS481H6327XTSA1	88					0.300	0.249	0.222	6h
DigiKey	2	BFS481H6327XTSA1CT-ND	1,531	1	Cut Tape	0.580	0.408	0.319	0.271	0.247

Inventory History

3 month trend: -6.90%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon BFS481H6327XTSA1.

IHS

Datasheet6 pages12 years ago

TME

_legacy Avnet

Inventory History

3 month trend:

-6.90%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-02-01

Lifecycle StatusNRND (Last Updated: 3 months ago)

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Descriptions

Descriptions of Infineon BFS481H6327XTSA1 provided by its distributors.

BFS481 Series 20 V 20 mA Low Noise Silicon Bipolar RF Transistor - SOT-363

Future Electronics

Bipolar Transistors (BJT); BFS481H6327XTSA1; INFINEON TECHNOLOGIES; NPN; 6; 12 V; 20 mA

Maritex

RF Small Signal Bipolar Transistor, 0.02A I(C), 2-Element, L Band, Silicon, NPN

Semicontronic

Bipolar - RF Transistor, Dual NPN, 12 V, 8 GHz, 175 mW, 20 mA, SOT-363

Avnet

2 NPN (Dual) 175mW 2V 100nA 20V 12V 20mA SOT-26 2mm*1.25mm*900¦Ìm

UnikeyIC

NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA

Infineon

RF TRANSISTOR, NPN, 12V, 8GHZ, SOT363

Newark

Trans GP BJT NPN 12V 0.02A 6-Pin SOT-363 T/R

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RF Bipolar Transistors RF BIP TRANSISTOR

Jak Electronics

RF TRANSISTOR, NPN, 12V, 8GHZ, SOT363; Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 8GHz; Power Dissipation Pd: 175mW; DC Collector Current: 20mA; DC Current Gain hFE: 70hFE; RF Transistor Case: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell