Infineon BFR360FH6327XTSA1

Name: Infineon BFR360FH6327XTSA1
Brand: Infineon
SKU: BFR360FH6327XTSA1

BFR360F Series 9 V 35 mA Low Noise Silicon Bipolar RF Transistor - TSFP-3

$ 0.135

NRND

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Distributor		SKU		Min	Pkg
Newark		BFR360FH6327XTSA1	4,280	5	Cut Tape		0.233	0.195	0.181	0.181
Arrow Electronics	3	BFR360FH6327XTSA1	4,541	1		0.106	0.106	0.106	0.106	0.106
Rochester Electronics		BFR360FH6327XTSA1	3,115					0.147	0.122	0.109	22h
DigiKey	3	BFR360FH6327XTSA1CT-ND	31,277	1	Cut Tape	0.310	0.215	0.164	0.137	0.137
Future Electronics	2	BFR360FH6327XTSA1	0	3K	Tape & Reel					0.096

Inventory History

3 month trend: +8.03%

CAD Models

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Alternate Parts

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Datasheets & Documents

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IHS

Datasheet15 pages7 years ago

element14 APAC

element14

TME

Farnell

Inventory History

3 month trend:

+8.03%

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Supply Chain

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-06-07

Lifecycle StatusNRND (Last Updated: 5 days ago)

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Descriptions

Descriptions of Infineon BFR360FH6327XTSA1 provided by its distributors.

BFR360F Series 9 V 35 mA Low Noise Silicon Bipolar RF Transistor - TSFP-3

Future Electronics

:210mW; DC Collector Current:35mA; DC Current Gain hFE:120; Operating Temperature Range:-60°C to +150°C; RF Transistor Case:TFSP; No. of Pins:3; SVHC:No

SHENGYU ELECTRONICS

Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 35 / Collector-Emitter Voltage (Vceo) V = 6 / DC Current Gain (hFE) = 120 / Collector-Base Voltage (Vcbo) V = 15 / Emitter-Base Voltage (Vebo) V = 2 / Operating Temperature Max. °C = 150 / Transit Frequency GHz = 14 / Power Dissipation (Pd) mW = 210 / Package Type = TSFP / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel

Distrelec

Transistor, RF TSFP3; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:6V; Transition Frequency Typ ft:14GHz; Power Dissipation Pd:210mW; DC Collector Current:35mA; DC Current Gain hFE:120; Operating Temperature Range:-60°C to +150°C; RF Transistor Case:TFSP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Associated Gain Ga:15.5dB; Continuous Collector Current Ic:35mA; Continuous Collector Current Ic Max:35mA; Current Ic Continuous a Max:35mA; Current Ic hFE:15mA; Gain Bandwidth ft Min:11GHz; Gain Bandwidth ft Typ:14GHz; Hfe Min:60; No. of Transistors:1; Noise Figure Typ:1dB; Output @ Third Order Intercept Point IP3:24dB; Package / Case:TSFP3; Power @ 1dB Gain Compression, P1dB:9dBm; Power Dissipation Ptot Max:210mW; SMD Marking:FB2; Termination Type:SMD; Test Frequency:1.8GHz; Transistor Case Style:TSFP; Voltage Vcbo:15V

element14 APAC