Infineon BFP840ESDH6327XTSA1

BFP840ESD: 2.25 V 35mA Robust Low Noise Silicon Germanium Bipolar RF Transistor
$ 0.229
NRND
Manufacturer PageDatasheet

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon BFP840ESDH6327XTSA1.

IHS

Datasheet22 pages7 years ago

element14 APAC

Burklin Elektronik

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Supply Chain

Country of OriginGermany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-04-25
Lifecycle StatusNRND (Last Updated: 2 weeks ago)

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Descriptions

Descriptions of Infineon BFP840ESDH6327XTSA1 provided by its distributors.

BFP840ESD: 2.25 V 35mA Robust Low Noise Silicon Germanium Bipolar RF Transistor
Future Electronics
The BFP840ESD is a discrete hetero-junction bipolar transistor (HBT) specifically designed for high performance 5 GHz band.
Infineon
RF TRANSISTOR, NPN, 2.25V, 80GHZ, SOT343; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.25V; Transition Frequency ft: 80GHz; Power Dissipation Pd: 75mW; DC Collector Current: 35mA; DC Current Gain hFE: 150hFE; RF Transistor Case: SOT-343; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Farnell

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Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • BFP 840ESD H6327
  • BFP840ESD
  • BFP840ESD H6327
  • BFP840ESDH6327
  • SP000943010