Infineon AUIRFS3207Z

Name: Infineon AUIRFS3207Z
Brand: Infineon
SKU: AUIRFS3207Z

Transistor MOSFET N-ch 75V 120A D2PAK

$ 1.74

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor	SKU		Min	Pkg
Rochester Electronics	AUIRFS3207Z	100					1.950	1.740	1.640	12h
RS (Formerly Allied Electronics)	AUIRFS3207Z	0	3K	Bulk					2.910	1h
Farnell	AUIRFS3207Z	0	1		2.256*	2.216*	2.162*	2.028*	2.028*	12h
Win Source	WS-AUIRFS3207Z	2,180	2			23.581	20.437	20.437	20.437	13h
Worldway Electronics	AUIRFS3207Z	12,830	7	Tube		0.628	0.609	0.577	0.577	12h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon AUIRFS3207Z.

IHS

Datasheet11 pages10 years ago

Datasheet13 pages14 years ago

Inventory History

3 month trend:

+0.00%

Alternate Parts

This Part

Alternate Parts

InfineonAUIRFS3207Z

InfineonIRFS3207TRLPBF

Price @ 1000

$ 1.74

$ 1.434

Stock

56,288

282,441

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

75 V

Continuous Drain Current (ID)

120 A

75 A

Threshold Voltage

2 V

4 V

Rds On Max

4.1 mΩ

4.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

300 W

Input Capacitance

6.92 nF

7.6 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-08-16

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon AUIRFS3207Z provided by its distributors.

Transistor MOSFET N-ch 75V 120A D2PAK

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 75V 170A Automotive 3-Pin(2+Tab) D2PAK Tube

Verical

Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package

International Rectifier

AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS

Infineon SCT

MOSFET, N-CH, 75V, 170A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

element14 APAC

Benefits: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified

Infineon