Infineon AIKQ200N75CP2XKSA1

IGBT, EDT2, 200 A, 1.3 V, 1.071 kW, 750 V, TO-247 Plus, 3 Pins

Trans IGBT Chip N-CH 750V 200A 1071W 3-Pin(3+Tab) TO-247 Tube

Insulated Gate Bipolar Transistor, 200A I(C), 750V V(BR)CES, N-Channel, TO-247

Infineon AIKQ200N75CP2XKSA1 IGBT, 200 A 750 V TO247PLUS

TRANSISTOR, IGBT, 750V, 200A, TO-247PLUS;

晶体管, 晶体管, IGBT, 750V, 200A, TO-247+;

Igbt, Single, 750V, 200A, To-247 Plus; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:1.3V; Power Dissipation:1.071Kw; Collector Emitter Voltage Max:750V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon Technologies AIKQ200N75CP2XKSA1

The automotive IGBT discrete AIKQ200N75CP2 is an EDT2 IGBT with a co-packed diode in the TO247PLUS package. The 750V EDT technology significantly improves energy efficiency and cooling efforts for high voltage automotive applications by enabling battery voltages up to 470V and safe fast switching due to increased overvoltage margins. Thus enabling high performant inverter systems.The EDT2 technology has an extremely tight parameter distribution and a positive thermal coefficient. This enables easy paralleling operation, providing system flexibility and power scalability.With a 200 A nominal current, the AIKQ200N75CP2 classifies as best in class discrete IGBT in a TO247PLUS package. This feature reduces the number of paralleled devices required to reach a certain power class, increasing power density and reducing the overall system cost.