Infineon AIGB50N65H5ATMA1

Trans IGBT Chip N-CH 650V 80A 305W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R

TO-263-3D2Pak (2Leads + Tab) TO-263AB Surface Mount NPT IGBT Transistor 50A 650V

Igbt, Single, 650V, 80A, To-263; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.65V; Power Dissipation:305W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon Technologies AIGB50N65H5ATMA1

Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC.TRENCHSTOP™ 5 AUTO is an IGBT technology that enables world’s lowest losses for switching and conduction in its category. The resulting high efficiency enables either an increased cruising range or a downsizing of the batteries for electric vehicles. For hybrid vehicles, it helps to reduce overall fuel consumption. The great performance of TRENCHSTOP™ 5 AUTO offers a cost-optimized solution where engineers were used to use MOSFETs only.Moreover, TRENCHSTOP™ 5 AUTO technology in an SMD housing, like the D²PAK (PG-TO263-3), even further decreases IGBT solution costs by reducing cost on system and manufacturing level. This comes with the benefit of increased quality control due to automated processes.