Renesas HAT2019R
Descriptions
Descriptions of Renesas HAT2019R provided by its distributors.
Silicon N Channel Power MOS FET High Speed Power Switching
Power Field-Effect Transistor, 8A I(D), 30V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Manufacturer Aliases
Renesas has several brands around the world that distributors may use as alternate names. Renesas may also be known as the following names:
- Renesas Electronics
- Renesas Electronics America Inc
- Renesas Electronics America
- RENESA
- REN
- RENES
- RENESAS TECHNOLOGY CORP
- RENESAS TECHNOLOGY
- Renesas Electronics Corporation
- RENESAS ELECTRONICS CORP
- RENSAS
- RENASAS
- Renesas / Intersil
- RNS
- RENESAS-PB
- RENESASTEC
- RENESES
- Renesas Technology America
- Renesas Design Germany GmbH
- Renesas / IDT
- RENESASE
- RENESAS TECHNOLOGY HONG KONG
- Renesas Electronics Operations Services Limited
- RENEASAS
- RENESAS/M
Technical Specifications
Physical
Number of Terminals8
Technical
Continuous Drain Current (ID)8 A
Drain to Source Resistance37 mΩ
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Number of Elements1