GaN Systems GS61008T-MR
$ 4.51
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | GS61008T-MR | 0 | 250 | |||||||||
| Component Stockers USA | GS61008T-MR | 3,746 | >1wk | |||||||||
| XScomponents | GS61008T-MR | 0 | 3K | 1d |
Datasheets & Documents
Download datasheets and manufacturer documentation for GaN Systems GS61008T-MR.
CAD Models
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|---|---|---|---|
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Descriptions
Descriptions of GaN Systems GS61008T-MR provided by its distributors.
Trans MOSFET N-CH GaN 100V 90A 4-Pin GaNPX T/R
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET
Manufacturer Aliases
GaN Systems has several brands around the world that distributors may use as alternate names. GaN Systems may also be known as the following names:
- GAN SYSTEMS INC
- GaNPower
- GaN Systems / Infineon
Technical Specifications
Physical
Number of Terminals4
Technical
Continuous Drain Current (ID)90 A
Drain to Source Breakdown Voltage120 V
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vdss)100 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Dimensions
Height621 µm
Datasheets & Documents
Download datasheets and manufacturer documentation for GaN Systems GS61008T-MR.