Fuji 2MBI150U4A-120-50

IGBT, DUAL, MODULE, 150A, 1200V

Igbt, Dual, Module, 150A, 1200V; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:735W; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |FUJI ELECTRIC 2MBI150U4A-120-50

IGBT, DUAL, MODULE, 150A, 1200V; Transistor Polarity: N Channel; DC Collector Current: 200A; Collector Emitter Saturation Voltage Vce(on): 2.3V; Power Dissipation Pd: 735W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: Module; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: -; Current Ic @ Vce Sat: 150A; Current Ic Continuous a Max: 200A; Current Temperature: 25°C; External Depth: 34mm; External Length / Height: 30mm; External Width: 92mm; Fall Time tf: 410ns; Full Power Rating Temperature: 25°C; Isolation Voltage: 2.5kV; Junction Temperature Tj Max: 150°C; Module Configuration: Dual; No. of Transistors: 2; Power Dissipation Max: 735W; Pulsed Current Icm: 400A; Rise Time: 320ns; Termination Type: Screw; Voltage Vces: 1.2kV