onsemi FQD2N90TF

Name: onsemi FQD2N90TF
Brand: onsemi
SKU: FQD2N90TF

N-Channel QFET® MOSFET 900V, 1.7A, 7.2Ω

$ 0.581

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor	SKU		Min	Pkg
Rochester Electronics	FQD2N90TF	523					0.700	0.581	0.518	35m
Win Source	WS-FQD2N90TF	959	110					0.359	0.359	2h
Worldway Electronics	FQD2N90TF	29,157	7	Bulk		0.174	0.169	0.160	0.160	1d
Chipsmall Limited	FQD2N90TF	500,000	1		0.720	0.480	0.288	0.240	0.240	1d
SHENGYU ELECTRONICS	FQD2N90TF	14,265	1		0.365	0.357	0.350	0.340	0.320	6d

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQD2N90TF.

onsemi

Datasheet8 pages12 years ago

Datasheet0 pages0 years ago

IHS

Fairchild Semiconductor

Mouser

Inventory History

3 month trend:

+0.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFQD2N90TF

onsemiFQD2N90TM

Price @ 1000

$ 0.581

$ 0.666

Stock

589,485

556,305

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-252-3

DPAK

Drain to Source Voltage (Vdss)

900 V

Continuous Drain Current (ID)

1.7 A

Threshold Voltage

Rds On Max

7.2 Ω

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

2.5 W

Input Capacitance

500 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-07-13

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2011-03-02

LTD Date2011-09-02

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Descriptions

Descriptions of onsemi FQD2N90TF provided by its distributors.

N-Channel QFET® MOSFET 900V, 1.7A, 7.2Ω

onsemi

Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:900V; Continuous Drain Current, Id:1.7A; On Resistance, Rds(on):7.2ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:5V ;RoHS Compliant: Yes

Newark

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor