Diodes Inc. ZXMN2A01FTA

Name: Diodes Inc. ZXMN2A01FTA
Brand: Diodes Inc.
SKU: ZXMN2A01FTA

Power MOSFET, Low Voltage, N Channel, 20 V, 2.2 A, 0.12 ohm, SOT-23, Surface Mount

$ 0.175

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Distributor		SKU		Min	Pkg
Avnet		ZXMN2A01FTA	30,000	3K					0.115	13h
Newark	2	ZXMN2A01FTA	5,729	5	Cut Tape	0.430	0.289	0.209	0.209
Future Electronics	2	ZXMN2A01FTA	492,000	3K	Tape & Reel				0.290
Arrow Electronics	3	ZXMN2A01FTA	1,316	449				0.140	0.140
Verical	3	ZXMN2A01FTA	18,000	3K					0.109

Inventory History

3 month trend: +14.61%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Diodes Inc. ZXMN2A01FTA.

Diodes Inc SCT

Technical Drawing5 pages9 years ago

Newark

IHS

Future Electronics

iiiC

Inventory History

3 month trend:

+14.61%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-04-25

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Diodes Inc. ZXMN2A01FTA provided by its distributors.

Power MOSFET, Low Voltage, N Channel, 20 V, 2.2 A, 0.12 ohm, SOT-23, Surface Mount

Avnet Silica

ZXMN2A01 Series 20 V 0.12 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3

Future Electronics

20V N-CHANNEL ENHANCEMENT MODE MOSFET Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

N CHANNEL MOSFET, 20V, 2.2A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current, Id:2.2A; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.12ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:700mV ;RoHS Compliant: Yes

Newark

MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):120mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.2A; Current Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:120mohm; Package / Case:SOT-23; Power Dissipation Pd:625mW; Power Dissipation Pd:806mW; Power Dissipation Ptot Max:625mW; Pulse Current Idm:8A; SMD Marking:7N2; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Min:700mV

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