onsemi FDC6310P

Name: onsemi FDC6310P
Brand: onsemi
SKU: FDC6310P

MOSFET Transistor, Dual P Channel, -2.2 A, -20 V, 0.1 ohm, -4.5 V, -1 V

$ 0.223

Production

Datasheet

Manufacturer Page

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor

SKU

Min

Pkg

Bulk Pricing

Avnet

FDC6310P

10,040

2084

USD

14h

Cut Tape

USD

Rochester Electronics

USD

11h

USD

3 month trend: -72.03%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDC6310P.

onsemi

Datasheet7 pages3 years ago

Datasheet0 pages0 years ago

Newark

IHS

Upverter

Future Electronics

Inventory History

3 month trend:

-72.03%

CAD Models

Download onsemi FDC6310P symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint	3D	Download
SnapEDA	Footprint		Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-08-31

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Related Parts

Diodes Inc.ZXMN2A01FTA

Power MOSFET, Low Voltage, N Channel, 20 V, 2.2 A, 0.12 ohm, SOT-23, Surface Mount

Details

InfineonBSS205NH6327XTSA1

20V 2.5A 50m´Î@4.5V2.5A 500mW 1.2V@11Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS

Details

Diodes Inc.ZXM61N02FTA

ZXM61N02F 20 V 0.18 Ohm N-Channel Enhancement Mode Vertical DMOS FET - SOT-23

Details

VishaySI2302DDS-T1-GE3

VISHAY SI2302DDS-T1-GE3 MOSFET Transistor, N Channel, 2.6 A, 20 V, 0.045 ohm, 4.5 V

Details

InfineonBSS806NH6327XTSA1

Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.041ohm; 0.5W; -55+150 deg.C; SMD; SOT23; AEC-Q100

Details

onsemiFDN335N

N-Channel PowerTrench™ MOSFET, 2.5V Specified, 20V, 1.7A, 70mΩ

Details

Descriptions

Descriptions of onsemi FDC6310P provided by its distributors.

MOSFET Transistor, Dual P Channel, -2.2 A, -20 V, 0.1 ohm, -4.5 V, -1 V

Newark

Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -2.2A, 125mΩ

onsemi

Transistor MOSFET Array Dual P-CH 20V 2.2A 6-Pin TSOT-23 T/R

Avnet Japan

960mW 12V 1.5V@ 250µA 5.2nC@ 4.5V 2individualPChannel 20V 125mΩ@ 2.2A,4.5V 2.2A 337pF@10V SOT SMD mount 2.9mm*1.6mm*1.1mm

UnikeyIC

MOSFET, 2 P-CH, -20V, -2.2A, SOT-23-6; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -2.2A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 960mW; Transistor Case Style: SOT-23; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Fairchild Semiconductor