Diodes Inc. FZT796ATA
$ 0.375
Production
Inventory History
3 month trend: -40.87%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-01-01
Lifecycle StatusProduction (Last Updated: 5 months ago)
Related Parts
Diodes Inc.ZXTP5401GTA
Trans GP BJT PNP 150V 2A 2000mW 4-Pin(3+Tab) SOT-223 T/R / TRANS PNP 150V 0.6A SOT223
Descriptions
Descriptions of Diodes Inc. FZT796ATA provided by its distributors.
200V 3W 250@300mA,10V 500mA PNP SOT-223-3 Bipolar (BJT) ROHS
FZT796A Series PNP 0.5A 200 V Silicon Planar Medium Power Transistor - SOT-223-3
Trans GP BJT PNP 200V 0.5A 3000mW 4-Pin(3+Tab) SOT-223 T/R
Transistor, Pnp, 200V, 0.5A, Sot-223 Rohs Compliant: Yes |Diodes Inc. FZT796ATA
300mV@ 20mA,200mA PNP 3W 7V 100nA 200V 200V 500mA SOT-223-3 6.5mm*3.5mm*1.65mm
General Purpose Transistors PNP Ic=500mA Vceo=200V hfe=300~800 P=3W SOT223
Power Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
Bipolar Transistors - BJT PNP High Voltage
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Inventory History
3 month trend: -40.87%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Number of Terminals4
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)-200 V
Collector Emitter Breakdown Voltage-200 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)200 V
Continuous Collector Current-500 mA
Current Rating-500 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-7 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min100
Max Breakdown Voltage200 V
Max Collector Current500 mA
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation2 W
Transition Frequency100 MHz
Voltage Rating (DC)-200 V
Dimensions
Height1.8 mm
Length6.7 mm
Width3.7 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements