DZT651-13 by Diodes Inc.

Diodes Inc. DZT651-13

Trans GP BJT NPN 60V 3A 4-Pin(3+Tab) SOT-223 T/R

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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	Distributor		SKU		Min	Pkg
	Microchip USA		DZT651-13	180	3500	Tray					0.123	8h
	Component Stockers USA		DZT651-13	7,123			0.040	0.040	0.040	0.040	0.040	>1wk
	Win Source		WS-DZT651-13	9,100	255					0.183	0.153	17h
	Aztech		DZT651-13	12,522			0.920	0.920	0.920	0.920	0.920	12h
	ZTZ Technology Limited		DZT651-13	22,659			0.169	0.155	0.142	0.115	0.115	4d

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Diodes Inc. DZT651-13.

IHS

Datasheet5 pages4 years ago

Factory Futures

iiiC

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-02-06

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2021-03-15

LTD Date2021-03-15

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Descriptions

Descriptions of Diodes Inc. DZT651-13 provided by its distributors.

Trans GP BJT NPN 60V 3A 4-Pin(3+Tab) SOT-223 T/R

Bipolar Transistors - BJT NPN 1W

Small Signal Bipolar Transistor

Manufacturer Aliases

Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:

Diodes Incorporated
DIODE
DII
DIO
DIODE INC
DC COMPONENTS
DIOD
YENYO
Diodes Zetex
MICRO COM
MICRO ELECTRONIC INS
Diodes Inc / Zetex
DIODE INCORPORATED
DIODES ZET
DIODSE
DINC
Diodes Inc Inc
DIOINC
FORMOSA MS
DIODES INC(RoHS)
ZETEX (DIODES INC)
DIODES INC/VISHAY
Diodes Incorporation
ZETEXDIODES
DIODES INC/VISH
Pericom
Diodes Incorporated

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Technical Specifications

Physical

Case/PackageSOT-223

MountSurface Mount

Number of Pins4

Weight7.994566 mg

Technical

Collector Base Voltage (VCBO)80 V

Collector Emitter Breakdown Voltage60 V

Collector Emitter Saturation Voltage600 mV

Collector Emitter Voltage (VCEO)60 V

Element ConfigurationSingle

Emitter Base Voltage (VEBO)5 V

Frequency200 MHz

Gain Bandwidth Product200 MHz

Max Breakdown Voltage60 V

Max Collector Current3 A

Max Operating Temperature150 °C

Max Power Dissipation2 W

Min Operating Temperature-55 °C

Number of Elements1

PolarityNPN

Power Dissipation2 W

Transition Frequency200 MHz

Dimensions

Height1.6 mm

Length6.5 mm

Width3.5 mm

Datasheets & Documents

Download datasheets and manufacturer documentation for Diodes Inc. DZT651-13.

IHS

Datasheet5 pages4 years ago

Factory Futures

iiiC

Compliance

Environmental Classification

China RoHSCompliant

Radiation HardeningNo

REACH SVHCYes

RoHSCompliant