onsemi NTR3C21NZT1G
Production
In StockPrice and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NTR3C21NZT1GOSCT-ND | 11,588 | 1 | Cut Tape | 20h | ||||||||
| 08AK6613 | 3,000 | 1 | 3d | |||||||||
| NTR3C21NZT1G | 8,637 | 1 | Cut Tape | 20h | ||||||||
| NTR3C21NZT1G | 5,430 | 54 | 17h | |||||||||
| 08AK6613 | 3,000 | 1 | Cut Tape | 22h |
Technical Specifications
Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)3.6 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time4.67 µs
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.54 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation470 mW
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation470 mW
Rds On Max24 mΩ
Rise Time14 ns
Schedule B8541290080
Turn-Off Delay Time420 ns
Turn-On Delay Time7 ns
Dimensions
Height1.11 mm
Inventory History
3 month trend: -10.20%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi NTR3C21NZT1G.
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Transistor: P-MOSFET; unipolar; -20V; -4.3A; 0.054ohm; 1.3W; -55+150 deg.C; SMD; SOT23
Descriptions
Descriptions of onsemi NTR3C21NZT1G provided by its distributors.
Single N-Channel Power MOSFET 20V, 3.6A, 24mΩ
NTR Series 20 V 24 mOhm 0.47 W Surface Mount N-Channel Power Mosfet - SOT-23
MOSFET, N-CH, 20V, 3.6A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Source Voltage Vds:20V; On Resistance
Small Signal Field-Effect Transistor, 3.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N-CH, 20V, 3.6A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 470mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3.6 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 55 / Gate-Source Voltage V = 8 / Fall Time us = 4.67 / Rise Time ns = 14 / Turn-OFF Delay Time ns = 420 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 470
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: -10.20%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)3.6 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time4.67 µs
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.54 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation470 mW
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation470 mW
Rds On Max24 mΩ
Rise Time14 ns
Schedule B8541290080
Turn-Off Delay Time420 ns
Turn-On Delay Time7 ns
Dimensions
Height1.11 mm