NXP Semiconductors MRF6V2300NR1
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRF6V2300NR1 | 310 | 20h | ||||||||||
| MRF6V2300NR1 | 24 | 1 | 1d | |||||||||
| 4149424 | 1 | 2d | ||||||||||
| MRF6V2300NR1 | 108,967 | 7 | Tape & Reel | 1d | ||||||||
| MRF6V2300NR1 | 6,965 | 7d |
Technical Specifications
Physical
MountSurface Mount
Number of Pins5
Weight1.646342 g
Technical
Continuous Drain Current (ID)2.5 mA
Current Rating10 µA
Drain to Source Breakdown Voltage110 V
Drain to Source Voltage (Vdss)110 V
Frequency220 MHz
Gain25.5 dB
Gate to Source Voltage (Vgs)10 V
Max Frequency600 MHz
Max Operating Temperature225 °C
Max Output Power300 W
Min Breakdown Voltage110 V
Min Operating Temperature-65 °C
Number of Elements1
Output Power300 W
Test Current900 mA
Test Voltage50 V
Voltage Rating110 V
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for NXP Semiconductors MRF6V2300NR1.
Related Parts
NXP SemiconductorsMRF6V2150NR1
RF Power Transistor,10 to 450 MHz, 150 W, Typ Gain in dB is 25 @ 220 MHz, 50 V, LDMOS, SOT1736
NXP SemiconductorsMRF6V2010NR1
RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732
NXP SemiconductorsMRF6V2150NBR1
RF Power Transistor,10 to 450 MHz, 150 W, Typ Gain in dB is 25 @ 220 MHz, 50 V, LDMOS, SOT1735
Descriptions
Descriptions of NXP Semiconductors MRF6V2300NR1 provided by its distributors.
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V
Power LDMOS Transistor N-Channel 110V 5-Pin TO-270 WB EP T/R
Trans RF MOSFET N-CH 110V 5-Pin TO-270 W T/R
RF ULTRA HIGH FREQUENCY BAND, N-
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.63V; Package/Case:4-TO-270 ;RoHS Compliant: Yes
Manufacturer Aliases
NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:
- NXP
- PHILIPS
- PHIL
- PHI
- PHILLIPS
- NXP USA Inc
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- Philips Semiconductor
- NXP/PHILIPS
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- PHILIPS ECG
- NXP / Freescale
- PHILL
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins5
Weight1.646342 g
Technical
Continuous Drain Current (ID)2.5 mA
Current Rating10 µA
Drain to Source Breakdown Voltage110 V
Drain to Source Voltage (Vdss)110 V
Frequency220 MHz
Gain25.5 dB
Gate to Source Voltage (Vgs)10 V
Max Frequency600 MHz
Max Operating Temperature225 °C
Max Output Power300 W
Min Breakdown Voltage110 V
Min Operating Temperature-65 °C
Number of Elements1
Output Power300 W
Test Current900 mA
Test Voltage50 V
Voltage Rating110 V
Compliance
Environmental Classification
Halogen FreeHalogen Free
Lead FreeContains Lead
RoHSCompliant
Compliance Statements