NXP Semiconductors MRF6V2150NR1

RF Power Transistor, 10 to 450 MHz, 150 W, Typ Gain in dB is 25 @ 220 MHz, 50 V, LDMOS, SOT1736

Technical Specifications

Physical
MountSurface Mount
Number of Pins5
Weight1.646342 g
Technical
Continuous Drain Current (ID)2.5 mA
Current Rating10 µA
Drain to Source Breakdown Voltage110 V
Drain to Source Voltage (Vdss)110 V
Frequency220 MHz
Gain25 dB
Gate to Source Voltage (Vgs)12 V
Max Frequency450 MHz
Max Operating Temperature225 °C
Max Output Power150 W
Min Breakdown Voltage50 V
Min Operating Temperature-65 °C
Number of Elements1
Output Power150 W
PackagingTape and Reel
Test Current450 mA
Test Voltage50 V
Voltage Rating110 V

Documents

Download datasheets and manufacturer documentation for NXP Semiconductors MRF6V2150NR1.

NXP Semiconductors
Datasheet18 pages13 years ago
Freescale Semiconductor
Datasheet18 pages13 years ago
Technical Drawing3 pages10 years ago
Newark
Datasheet15 pages16 years ago
Datasheet18 pages15 years ago

Alternate Parts

Price @ 1000
$ 60.94
$ 28.198
$ 28.198
Stock
239,163
237,862
237,862
Authorized Distributors
1
10
10
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
-
TO-270
TO-270
Drain to Source Voltage (Vdss)
110 V
-
-
Continuous Drain Current (ID)
2.5 mA
-
-
Threshold Voltage
-
-
-
Rds On Max
-
-
-
Gate to Source Voltage (Vgs)
12 V
10 V
10 V
Power Dissipation
-
-
-
Input Capacitance
-
-
-

Engineering Resources

View Evaluation kits and Reference designs for NXP Semiconductors MRF6V2150NR1.

Related Parts

Descriptions

Descriptions of NXP Semiconductors MRF6V2150NR1 provided by its distributors.

RF Power Transistor,10 to 450 MHz, 150 W, Typ Gain in dB is 25 @ 220 MHz, 50 V, LDMOS, SOT1736
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V, FM4F
NXP Semiconductors SCT
RF FET, 110V, 450MHZ-10MHZ, TO-272WB; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 450MHz; Operating Frequency Max: 10MHz; RF Transistor Case: TO-270WB; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MRF6V2150N Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.62V; Package/Case:TO-272 ;RoHS Compliant: Yes

Manufacturer Aliases

NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:

  • NXP
  • PHILIPS
  • PHIL
  • PHI
  • PHILLIPS
  • NXP USA Inc
  • NXP SEMI
  • NXP SEMICONDUCTOR
  • PHILIPS/NXP
  • PHILIPS SEMICONDUCTORS
  • PHILIP
  • Philips Semiconductor
  • NXP/PHILIPS
  • PHILPS
  • PHILIPS COMPONENTS
  • PHILIPS SEMI
  • PHL
  • PHLIPS
  • NXP Semicon
  • PHILIPS ECG
  • NXP / Freescale
  • PHILL
  • Philips Semiconducto
  • PHILLIP
  • PHILI
  • Philips Semiconductors
  • NXP Semiconductors NV
  • NXP

Technical Specifications

Physical
MountSurface Mount
Number of Pins5
Weight1.646342 g
Technical
Continuous Drain Current (ID)2.5 mA
Current Rating10 µA
Drain to Source Breakdown Voltage110 V
Drain to Source Voltage (Vdss)110 V
Frequency220 MHz
Gain25 dB
Gate to Source Voltage (Vgs)12 V
Max Frequency450 MHz
Max Operating Temperature225 °C
Max Output Power150 W
Min Breakdown Voltage50 V
Min Operating Temperature-65 °C
Number of Elements1
Output Power150 W
PackagingTape and Reel
Test Current450 mA
Test Voltage50 V
Voltage Rating110 V

Documents

Download datasheets and manufacturer documentation for NXP Semiconductors MRF6V2150NR1.

NXP Semiconductors
Datasheet18 pages13 years ago
Freescale Semiconductor
Datasheet18 pages13 years ago
Technical Drawing3 pages10 years ago
Newark
Datasheet15 pages16 years ago
Datasheet18 pages15 years ago

Compliance

Environmental Classification
Halogen FreeHalogen Free
Lead FreeContains Lead
Radiation HardeningNo
RoHSCompliant
Compliance Statements
Materials Sheet5 pages10 years ago
Rohs Statement1 page11 years ago
Reach Statement3 pages11 years ago
Conflict Mineral Statement1 page10 years ago
Rohs Statement1 page12 years ago
Reach Statement2 pages8 years ago