onsemi MPSA06
Production
Technical Specifications
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Weight201 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating500 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)4 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min100
Max Collector Current500 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation625 mW
Schedule B8541210080
TerminationThrough Hole
Transition Frequency100 MHz
Voltage Rating (DC)80 V
Dimensions
Height5.33 mm
Length5.21 mm
Width4.19 mm
Inventory History
3 month trend: +4.86%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for onsemi MPSA06.
Newark
onsemi
element14 APAC
Fairchild Semiconductor
RS (Formerly Allied Electronics)
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.089
$ 0.052
Stock
740,695
43,270
Authorized Distributors
10
3
Mount
Through Hole
-
Case/Package
TO-92
TO-92
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
Max Collector Current
500 mA
-
Transition Frequency
100 MHz
100 MHz
Collector Emitter Saturation Voltage
250 mV
-
hFE Min
100
-
Power Dissipation
625 mW
625 mW
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi MPSA06.
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Descriptions
Descriptions of onsemi MPSA06 provided by its distributors.
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Bipolar Transistors - BJT NPN Transistor Medium Power
500 mA, 80 V NPN Small Signal Bipolar Junction Transistor
Transistor GP BJT NPN 80V 0.5A 3-Pin TO-92 Bulk - Bulk
MPSAXX Series 80 V CE Breakdown 0.5 A NPN General Purpose Amplifier - TO-92
Transistor NPN MPSA06 FAIRCHILD milliampere=500 TO92
NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33.
Transistor, Npn, 80V, 0.5A, To-226Aa; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:500Ma; Power Dissipation:625Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MPSA06.
TRANSISTOR, NPN, 80V, 0.5A, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 625mW; DC Collector Current: 500mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 250mV; Current Ic Continuous a Max: 100mA; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 625mW; Termination Type: Through Hole
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +4.86%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Weight201 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating500 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)4 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min100
Max Collector Current500 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation625 mW
Schedule B8541210080
TerminationThrough Hole
Transition Frequency100 MHz
Voltage Rating (DC)80 V
Dimensions
Height5.33 mm
Length5.21 mm
Width4.19 mm
Documents
Download datasheets and manufacturer documentation for onsemi MPSA06.
Newark
onsemi
element14 APAC
Fairchild Semiconductor
RS (Formerly Allied Electronics)
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements