Infineon IRLML9301TRPBF
Production
Technical Specifications
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-3.6 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance82 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance388 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Manufacturer Package IdentifierIRLML9301TRPBF
Min Operating Temperature-55 °C
Nominal Vgs-1.3 V
Number of Channels1
Number of Elements1
On-State Resistance64 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.3 W
Rds On Max64 mΩ
Recovery Time21 ns
Resistance64 MΩ
Rise Time19 ns
Schedule B8541290080
Threshold Voltage-2.4 V
Turn-Off Delay Time16 ns
Turn-On Delay Time9.6 ns
Dimensions
Height1.016 mm
Length3.0226 mm
Width1.397 mm
Inventory History
3 month trend: -11.64%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRLML9301TRPBF.
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Descriptions
Descriptions of Infineon IRLML9301TRPBF provided by its distributors.
Transistor: P-MOSFET; unipolar; -30V; -3.6A; 0.064ohm; 1.3W; -55+150 deg.C; SMD; SOT23
-30V Single P-Channel HEXFET Power MOSFET in a Micro3 package, SOT23-3, RoHS
Infineon SCT
Trans MOSFET P-CH 30V 3.6A 3-Pin SOT-23 T/R / MOSFET P-CH 30V 3.6A SOT-23-3
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Power dissipation: 1.3 W
Single N-Channel 30 V 64 mOhm 4.8 nC HEXFET® Power Mosfet - MICRO-3
Power Field-Effect Transistor, 3.6A I(D), 30V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
P Channel, MOSFET, -30V, -3.6 A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.064ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.3V ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; P-Channel MOSFET; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -11.64%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-3.6 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance82 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance388 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Manufacturer Package IdentifierIRLML9301TRPBF
Min Operating Temperature-55 °C
Nominal Vgs-1.3 V
Number of Channels1
Number of Elements1
On-State Resistance64 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.3 W
Rds On Max64 mΩ
Recovery Time21 ns
Resistance64 MΩ
Rise Time19 ns
Schedule B8541290080
Threshold Voltage-2.4 V
Turn-Off Delay Time16 ns
Turn-On Delay Time9.6 ns
Dimensions
Height1.016 mm
Length3.0226 mm
Width1.397 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements