Infineon IRLML2502TRPBF

Name: Infineon IRLML2502TRPBF
Brand: Infineon
SKU: IRLML2502TRPBF
Price: 0.06357 USD
Availability: InStock

Transistor: N-MOSFET; unipolar; 12V; 4.3A; 0.05ohm; 1.3W; -55+150 deg.C; SMD; SOT23

$ 0.123

NRND

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet		IRLML2502TRPBF	612,000	3K						0.064	17h
Newark	2	26AC0678	612,000	3K	Tape & Reel	0.096	0.096	0.096	0.096	0.096
Future Electronics	2	6173881	660,000	3K	Tape & Reel					0.070
Rutronik		TMOSS6806	6,000	3K						0.094	21h
Rochester Electronics		IRLML2502TRPBF	10,481					0.110	0.092	0.082	14h

Inventory History

3 month trend: -10.69%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLML2502TRPBF.

IHS

Datasheet9 pages11 years ago

Datasheet9 pages22 years ago

Newark

element14 APAC

iiiC

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

-10.69%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRLML2502TRPBF

InfineonIRLML2502PBF

Price @ 1000

$ 0.123

$ 0.105

Stock

10,628,985

211,620

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

Drain to Source Voltage (Vdss)

20 V

Continuous Drain Current (ID)

4.2 A

Threshold Voltage

1.2 V

Rds On Max

45 mΩ

Gate to Source Voltage (Vgs)

12 V

Power Dissipation

1.25 W

Input Capacitance

740 pF

Supply Chain

Lifecycle StatusNRND (Last Updated: 4 days ago)

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Details

Descriptions

Descriptions of Infineon IRLML2502TRPBF provided by its distributors.

Transistor: N-MOSFET; unipolar; 12V; 4.3A; 0.05ohm; 1.3W; -55+150 deg.C; SMD; SOT23

Maritex

MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.035Ohm;ID 4.2A;Micro3;PD 1.25W;VGS +/-12V

RS (Formerly Allied Electronics)

Power MOSFET, N Channel, 20 V, 4.2 A, 45 Milliohms, SOT-23, 3 Pins, Surface Mount

EBV Elektronik

20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

Infineon SCT

Trans MOSFET N-CH Si 20V 4.2A 3-Pin SOT-23 T/R / HEXFET Power MOSFET

Win Source

HEXFET Power MOSFET Small Signal Field-Effect Transistor

ComSIT Distribution GmbH

Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Semicontronic

MOSFET, N, MICRO3; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:1.25W; Transistor Case Style:µSOIC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.2A; Package / Case:Micro3; Power Dissipation Pd:1.25W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.2V; Voltage Vgs Rds on Measurement:4.5V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:4.2A; Resistance, Rds On:0.045ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1.2V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:33A; Current, Idss Max:1.0µA; External Depth:2.5mm; External Length / Height:1.12mm; N-channel Gate Charge:12nC; No. of Pins:3; Power Dissipation:1.25W; Power, Pd:1.25W; Quantity, Reel:3000; SMD Marking:1G; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Time, Fall:26s; Time, Rise:10ns; Time, trr Typ:16ns; Transistors, No. of:1; Typ Capacitance Ciss:740pF; Typ Charge Qrr @ Tj = 25°C:8.6nC; Voltage, Vds Max:20V; Voltage, Vgs th Max:1.2V; Voltage, Vgs th Min:0.6V; Width, External:3.05mm; Width, Tape:8mm

Farnell