Vishay IRL640SPBF
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time52 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance1.8 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation3.1 W
Rds On Max180 mΩ
Resistance180 mΩ
Rise Time83 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time44 ns
Turn-On Delay Time8 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm
Inventory History
3 month trend: +21.15%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Vishay IRL640SPBF.
Related Parts
onsemiFQB19N20LTM
N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 21 A, 140 mΩ, D2PAK
onsemiFQB19N20TM
N-Channel Power MOSFET, QFET®, 200 V, 19.4 A, 150 mΩ, D2PAK
onsemiFQB19N20CTM
N-Channel Power MOSFET, QFET®, 200 V, 19 A, 170 mΩ, D2PAK
Descriptions
Descriptions of Vishay IRL640SPBF provided by its distributors.
Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3
N Channel Mosfet, 200V, 17A Smd-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:5V; Gate Source Threshold Voltage Max:2V Rohs Compliant: No |Vishay IRL640SPBF.
POWER MOSFET Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: +21.15%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Weight1.437803 g
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time52 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance1.8 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation3.1 W
Rds On Max180 mΩ
Resistance180 mΩ
Rise Time83 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time44 ns
Turn-On Delay Time8 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements