Infineon IRFR4510TRPBF

Single N-Channel 100 V 13.9 mOhm 54 nC HEXFET® Power Mosfet - TO-252-3
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Technical Specifications

Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)56 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance11.1 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time34 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.031 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation143 W
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
On-State Resistance13.9 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation143 W
Rds On Max13.9 mΩ
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time42 ns
Turn-On Delay Time18 ns
Dimensions
Height2.52 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRFR4510TRPBF.

Future Electronics
Datasheet11 pages11 years ago

Inventory History

3 month trend:
+3.14%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IRFR4510TRPBF.

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Descriptions

Descriptions of Infineon IRFR4510TRPBF provided by its distributors.

Single N-Channel 100 V 13.9 mOhm 54 nC HEXFET® Power Mosfet - TO-252-3
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Lighting LED
Trans MOSFET N-CH Si 100V 63A 3-Pin(2+Tab) DPAK T/R / MOSFET N CH 100V 56A DPAK
Transistor, HEXFET Power MOSFET, N-channel, 100V , 63A, 13.9mOhm max, D-PAK | Infineon IRFR4510TRPBF
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 56A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 100V, 63A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0111ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:143W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 63 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 13.9 / Gate-Source Voltage V = 20 / Fall Time ns = 34 / Rise Time ns = 42 / Turn-OFF Delay Time ns = 42 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 143

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRFR4510TRPBF.
  • SP001567870

Technical Specifications

Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)56 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance11.1 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time34 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.031 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation143 W
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
On-State Resistance13.9 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation143 W
Rds On Max13.9 mΩ
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time42 ns
Turn-On Delay Time18 ns
Dimensions
Height2.52 mm

Documents

Download datasheets and manufacturer documentation for Infineon IRFR4510TRPBF.

Future Electronics
Datasheet11 pages11 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago