Infineon IRFP2907PBF
Production
Technical Specifications
Physical
Case/PackageTO-247-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)209 A
Current Rating209 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance3.6 mΩ
Drain to Source Voltage (Vdss)75 V
Dual Supply Voltage75 V
Element ConfigurationSingle
Fall Time130 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation470 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance4.5 mΩ
Package Quantity400
PackagingBulk
Power Dissipation330 W
Rds On Max4.5 mΩ
Recovery Time210 ns
Resistance4.5 MΩ
Rise Time190 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time130 ns
Turn-On Delay Time23 ns
Voltage Rating (DC)75 V
Dimensions
Height20.7 mm
Length15.87 mm
Width5.3086 mm
Inventory History
3 month trend: +9.08%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for Infineon IRFP2907PBF.
Newark
Jameco
DigiKey
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRFP2907PBF.
Related Parts
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IRFP3077PBF N-channel MOSFET Transistor, 160 A, 75 V, 3-Pin TO-247AC
Infineon AUIRFP2907
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a TO-247AC Package, TO247-3, RoHS
Infineon IRFP2907ZPBF
MOSFET Operating temperature: -55...175 °C Housing type: TO-247 Power dissipation: 310 W
Descriptions
Descriptions of Infineon IRFP2907PBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 4.5Milliohms;ID 209A;TO-247AC;PD 470W;-55de
Single N-Channel 75 V 4.5 mOhm 620 nC HEXFET® Power Mosfet - TO-247AC
75V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
Infineon SCT
IRFP2907PBF,MOSFET, 75V, 177A, 4.5 MOHM, 410 NC QG, TO-247AC
Power Field-Effect Transistor, 90A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N CH MOSFET, 75V, 209A, TO-247AC; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:209A; Drain Source Voltage Vds:75V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:470W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2012); Current Id Max:209A; Junction to Case Thermal Resistance A:0.45°C/W; Package / Case:TO-247AC; Power Dissipation Pd:470W; Power Dissipation Pd:330W; Pulse Current Idm:840A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +9.08%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)209 A
Current Rating209 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance3.6 mΩ
Drain to Source Voltage (Vdss)75 V
Dual Supply Voltage75 V
Element ConfigurationSingle
Fall Time130 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation470 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance4.5 mΩ
Package Quantity400
PackagingBulk
Power Dissipation330 W
Rds On Max4.5 mΩ
Recovery Time210 ns
Resistance4.5 MΩ
Rise Time190 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time130 ns
Turn-On Delay Time23 ns
Voltage Rating (DC)75 V
Dimensions
Height20.7 mm
Length15.87 mm
Width5.3086 mm
Documents
Download datasheets and manufacturer documentation for Infineon IRFP2907PBF.
Newark
Jameco
DigiKey
Compliance
Environmental Classification
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements