Vishay IRFBE30PBF
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 844-IRFBE30PBF | 1,635 | 1 | Tube | 2d | ||||||||
| IRFBE30PBF | 6,618 | 1 | 22h | |||||||||
| 70078888 | 769 | 1 | Bulk | 21h | ||||||||
| IRFBE30PBF-ND | 2,397 | 1 | Tube | 1d | ||||||||
| IRFBE30PBF | 1,161 | 1 | 1d |
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight6.000006 g
Technical
Continuous Drain Current (ID)4.1 A
Current48 A
Current Rating4.1 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance3 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation125 W
Rds On Max3 Ω
Recovery Time720 ns
Resistance3 Ω
Rise Time33 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time82 ns
Turn-On Delay Time12 ns
Voltage800 V
Voltage Rating (DC)800 V
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm
Inventory History
3 month trend: -9.77%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for Vishay IRFBE30PBF.
Newark
Future Electronics
TME
iiiC
Factory Futures
Jameco
Engineering Resources
View Evaluation kits and Reference designs for Vishay IRFBE30PBF.
Related Parts
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Descriptions
Descriptions of Vishay IRFBE30PBF provided by its distributors.
Single N-Channel 800 V 3 Ohms Flange Mount Power Mosfet - TO-220AB
IRFBE30PBF N-channel MOSFET Transistor, 4.1 A, 800 V, 3-Pin TO-220AB | Siliconix / Vishay IRFBE30PBF
Trans MOSFET N-CH 800V 4.1A 3-Pin (3+Tab) TO-220AB
Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 800V, 4.1A To-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:4.1A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: No |Vishay IRFBE30PBF.
MOSFET, N, 800V, 4.1A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:4.1A; Resistance, Rds On:3ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:16A; Lead Spacing:2.54mm; No. of Pins:3; Power Dissipation:125W; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:2°C/W; Transistors, No. of:1; Voltage, Vds Max:800V
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: -9.77%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight6.000006 g
Technical
Continuous Drain Current (ID)4.1 A
Current48 A
Current Rating4.1 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance3 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation125 W
Rds On Max3 Ω
Recovery Time720 ns
Resistance3 Ω
Rise Time33 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time82 ns
Turn-On Delay Time12 ns
Voltage800 V
Voltage Rating (DC)800 V
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm
Documents
Download datasheets and manufacturer documentation for Vishay IRFBE30PBF.
Newark
Future Electronics
TME
iiiC
Factory Futures
Jameco
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements