Vishay IRF840APBF

Transistor MOSFET N-CH 500V 8A 3-Pin (3+Tab) TO-220AB
Datasheet

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Technical Specifications

Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight6.000006 g
Technical
Continuous Drain Current (ID)8 A
Current Rating8 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance850 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.018 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation125 W
Rds On Max850 mΩ
Resistance850 mΩ
Rise Time23 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time26 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)500 V
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm

Documents

Download datasheets and manufacturer documentation for Vishay IRF840APBF.

element14 APAC
Datasheet8 pages14 years ago
Datasheet8 pages15 years ago
Datasheet9 pages8 years ago
Datasheet9 pages9 years ago
Newark
Datasheet9 pages7 years ago
Datasheet9 pages9 years ago
RS (Formerly Allied Electronics)
Datasheet8 pages21 years ago
Datasheet9 pages8 years ago
Datasheet3 pages15 years ago
Upverter
Datasheet8 pages2 years ago
TME
Datasheet9 pages3 years ago
iiiC
Datasheet9 pages11 years ago
DigiKey
Datasheet8 pages20 years ago

Inventory History

3 month trend:
+41.80%

Engineering Resources

View Evaluation kits and Reference designs for Vishay IRF840APBF.

Related Parts

Descriptions

Descriptions of Vishay IRF840APBF provided by its distributors.

Transistor MOSFET N-CH 500V 8A 3-Pin (3+Tab) TO-220AB
IRF840APBF N-channel MOSFET Transistor; 8 A; 500 V; 3-Pin TO-220AB
N-Channel 500 V 0.85 O 38 nC Flange Mount Power Mosfet - TO-220-3
MOSFET N-CH 500V 8A TO-220AB | Siliconix / Vishay IRF840APBF
500V 8A 850m´Î@10V4.8A 125W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 500V, 8A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:500V; On Resistance Rds(on):850mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:8A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Intertech
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Part Number Aliases

This part may be known by these alternate part numbers:

  • IRF840APBF.

Technical Specifications

Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight6.000006 g
Technical
Continuous Drain Current (ID)8 A
Current Rating8 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance850 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.018 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation125 W
Rds On Max850 mΩ
Resistance850 mΩ
Rise Time23 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time26 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)500 V
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm

Documents

Download datasheets and manufacturer documentation for Vishay IRF840APBF.

element14 APAC
Datasheet8 pages14 years ago
Datasheet8 pages15 years ago
Datasheet9 pages8 years ago
Datasheet9 pages9 years ago
Newark
Datasheet9 pages7 years ago
Datasheet9 pages9 years ago
RS (Formerly Allied Electronics)
Datasheet8 pages21 years ago
Datasheet9 pages8 years ago
Datasheet3 pages15 years ago
Upverter
Datasheet8 pages2 years ago
TME
Datasheet9 pages3 years ago
iiiC
Datasheet9 pages11 years ago
DigiKey
Datasheet8 pages20 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago