Vishay IRF840ALPBF

Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-262
Datasheet

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Weight2.387001 g
Technical
Continuous Drain Current (ID)8 A
Drain to Source Resistance850 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.018 nF
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation3.1 W
Rds On Max850 mΩ
Rise Time23 ns
Schedule B8541290080
Turn-Off Delay Time26 ns
Turn-On Delay Time11 ns
Dimensions
Height9.65 mm
Length10.41 mm
Width4.7 mm

Documents

Download datasheets and manufacturer documentation for Vishay IRF840ALPBF.

element14 APAC
Datasheet10 pages7 years ago
Newark
Datasheet8 pages12 years ago
Datasheet9 pages9 years ago
Datasheet10 pages11 years ago
Future Electronics
Datasheet10 pages2 years ago
TME
Datasheet10 pages5 years ago

Inventory History

3 month trend:
-1.63%

Engineering Resources

View Evaluation kits and Reference designs for Vishay IRF840ALPBF.

Related Parts

Descriptions

Descriptions of Vishay IRF840ALPBF provided by its distributors.

Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-262
POWER MOSFET Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.85ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 3.1W; Tr

Manufacturer Aliases

Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Intertech
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Technical Specifications

Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Weight2.387001 g
Technical
Continuous Drain Current (ID)8 A
Drain to Source Resistance850 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.018 nF
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation3.1 W
Rds On Max850 mΩ
Rise Time23 ns
Schedule B8541290080
Turn-Off Delay Time26 ns
Turn-On Delay Time11 ns
Dimensions
Height9.65 mm
Length10.41 mm
Width4.7 mm

Documents

Download datasheets and manufacturer documentation for Vishay IRF840ALPBF.

element14 APAC
Datasheet10 pages7 years ago
Newark
Datasheet8 pages12 years ago
Datasheet9 pages9 years ago
Datasheet10 pages11 years ago
Future Electronics
Datasheet10 pages2 years ago
TME
Datasheet10 pages5 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago