Infineon IRF630NPBF
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 942-IRF630NPBF | 1,786 | 1 | Tube | 4h | ||||||||
| IRF630NPBF | 1,045 | 17h | ||||||||||
| IRF630NPBF | 800 | 1 | 2d | |||||||||
| 70017265 | 3 | 1 | Bulk | 19h | ||||||||
| IRF630NPBF | 69,749 | 1 | 1d |
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)9.3 A
Current Rating9.3 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance300 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance575 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation82 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance300 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation82 W
Rds On Max300 mΩ
Recovery Time176 ns
Resistance300 mΩ
Rise Time14 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time27 ns
Turn-On Delay Time7.9 ns
Voltage Rating (DC)200 V
Dimensions
Height8.77 mm
Length10.54 mm
Width4.69 mm
Inventory History
3 month trend: +44.05%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for Infineon IRF630NPBF.
Factory Futures
International Rectifier
RS (Formerly Allied Electronics)
Jameco
DigiKey
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRF630NPBF.
Related Parts
VishayIRF630PBF
MOSFET N-CH 200V 9A TO-220AB / Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB
onsemiFQP10N20C
N-Channel Power MOSFET, QFET®, 200 V, 9.5 A, 360 mΩ, TO-220
VishayIRF644PBF
Single N-Channel 250 V 0.28 Ohms Flange Mount Power Mosfet - TO-220AB
Descriptions
Descriptions of Infineon IRF630NPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.3Ohm;ID 9.3A;TO-220AB;PD 82W;VGS +/-20V
Transistor: N-MOSFET; unipolar; 200V; 9A; 0.4ohm; 0.57W; -55+150 deg.C; THT; TO220
Trans MOSFET N-CH Si 200V 9.3A Automotive 3-Pin(3+Tab) TO-220AB Tube
Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - TO-220-3
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
200V 9.3A 82W 300m´Î@10V5.4A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 36 W
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
N Channel Mosfet, 200V, 9.3A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9.3A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRF630NPBF.
MOSFET, N, 200V, 9.5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:82W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.3A; Junction to Case Thermal Resistance A:1.83°C/W; Package / Case:TO-220AB; Power Dissipation Pd:82W; Power Dissipation Pd:82W; Pulse Current Idm:37A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +44.05%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)9.3 A
Current Rating9.3 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance300 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance575 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation82 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance300 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation82 W
Rds On Max300 mΩ
Recovery Time176 ns
Resistance300 mΩ
Rise Time14 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time27 ns
Turn-On Delay Time7.9 ns
Voltage Rating (DC)200 V
Dimensions
Height8.77 mm
Length10.54 mm
Width4.69 mm
Documents
Download datasheets and manufacturer documentation for Infineon IRF630NPBF.
Factory Futures
International Rectifier
RS (Formerly Allied Electronics)
Jameco
DigiKey
Compliance
Environmental Classification
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements