Vishay Siliconix IRF540

N-channel TrenchMOS transistor | MOSFET N-CH 100V 28A TO-220AB
Datasheet

Price and Stock

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Technical Specifications

Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Weight6.000006 g
Technical
Continuous Drain Current (ID)28 A
Current28 A
Current Rating28 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance77 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time43 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.7 nF
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation150 W
Rds On Max77 mΩ
Rise Time44 ns
Turn-Off Delay Time53 ns
Turn-On Delay Time11 ns
Voltage100 V
Voltage Rating (DC)100 V
Dimensions
Height9.01 mm
Length10.51 mm
Width4.7 mm

Documents

Download datasheets and manufacturer documentation for Vishay Siliconix IRF540.

Newark
Datasheet6 pages26 years ago
_legacy Avnet
Datasheet8 pages14 years ago
Datasheet8 pages15 years ago
RS (Formerly Allied Electronics)
Datasheet9 pages11 years ago
Datasheet6 pages26 years ago

Engineering Resources

View Evaluation kits and Reference designs for Vishay Siliconix IRF540.

Related Parts

Descriptions

Descriptions of Vishay Siliconix IRF540 provided by its distributors.

N-channel TrenchMOS transistor | MOSFET N-CH 100V 28A TO-220AB
Transistor NPN IRF540 INTERNATIONAL RECTIFIER Ampere=28 Volt=100 TO220
Halfin
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:28A; On-Resistance, Rds(on):77mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Continuous Drain Current - 100 Deg C:20A RoHS Compliant: No

Manufacturer Aliases

Vishay Siliconix has several brands around the world that distributors may use as alternate names. Vishay Siliconix may also be known as the following names:

  • SILICONIX/VISHAY
  • Siliconix (Vishay Siliconix)
  • VISHAY SILICONIX INC
  • VISHAY-SILICONIX(RoHS)
  • VISHAY AMERICAS/SILICONIX
  • SILICONIX INC/VISHAY
  • VISHAY SILIC
  • SILI / VIS
  • VISHAY/SILICONIX (VA)

Technical Specifications

Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Weight6.000006 g
Technical
Continuous Drain Current (ID)28 A
Current28 A
Current Rating28 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance77 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time43 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.7 nF
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation150 W
Rds On Max77 mΩ
Rise Time44 ns
Turn-Off Delay Time53 ns
Turn-On Delay Time11 ns
Voltage100 V
Voltage Rating (DC)100 V
Dimensions
Height9.01 mm
Length10.51 mm
Width4.7 mm

Documents

Download datasheets and manufacturer documentation for Vishay Siliconix IRF540.

Newark
Datasheet6 pages26 years ago
_legacy Avnet
Datasheet8 pages14 years ago
Datasheet8 pages15 years ago
RS (Formerly Allied Electronics)
Datasheet9 pages11 years ago
Datasheet6 pages26 years ago

Compliance

Environmental Classification
Lead FreeContains Lead
RoHSCompliant
Compliance Statements
Rohs Statement5 pages12 years ago