Infineon IR2183PBF

600 V half-bridge gate driver IC with shoot through protection, PDIP8, RoHS
Production

Price and Stock

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Technical Specifications

Physical
Case/PackageDIP
MountThrough Hole
Number of Pins8
Technical
Ambient Temperature Range High125 °C
Channel TypeIndependent
Fall Time20 ns
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Output Current2.3 A
Max Power Dissipation1 W
Max Supply Current1.6 mA
Max Supply Voltage20 V
Min Operating Temperature-40 °C
Min Supply Voltage10 V
Nominal Supply Current1 mA
Number of Channels2
Number of Drivers2
Number of Outputs2
Output Current1.9 A
Output Voltage20 V
Package Quantity3000
PackagingBulk
Power Dissipation1 W
Propagation Delay330 ns
Release Time220 ns
Rise Time40 ns
Schedule B8542310000
Turn-Off Delay Time220 ns
Turn-On Delay Time35 ns
Dimensions
Height5.33 mm
Length10.8966 mm
Width7.11 mm

Documents

Download datasheets and manufacturer documentation for Infineon IR2183PBF.

SHENGYU ELECTRONICS
Datasheet22 pages18 years ago
TME
Datasheet22 pages18 years ago
iiiC
Datasheet22 pages18 years ago

Inventory History

3 month trend:
-4.77%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IR2183PBF.

Related Parts

Descriptions

Descriptions of Infineon IR2183PBF provided by its distributors.

600 V half-bridge gate driver IC with shoot through protection, PDIP8, RoHS
MOSFET DRVR 600V 2.3A 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 8-Pin PDIP Tube - Rail/Tube
Tube IR2183PBF Half-Bridge 1996 gate driver 60ns -40C~150C TJ 1.9A 2.3A 1W
IR2183 Series 600 V 1.9 A 20 V Supply Dual Output Half Bridge Driver - DIP-8
HALF BRIDGE DRIVER Half Bridge Based MOSFET Driver, 2.3A, CMOS, PDIP8
Half Bridge Driver, SoftTurn-On, Low Side Inverting Input, Separate High and Low Side Input, 500ns Deadtime in a 8-Lead package
Through Hole Tube Obsolete EAR99 Gate Drivers ICs Inverting, Non-Inverting 2 600V V 8-DIP (0.300, 7.62mm) IR2183 Half-Bridge
MOSFET Driver IC; Device Type:High and Low Side; Supply Voltage Min:10V; Supply Voltage Max:25V; Package/Case:8-DIP; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; Fall Time, tf:20ns ;RoHS Compliant: Yes
The IR2183(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
600 V Half Bridge Driver IC with typical 1.9 A source and 2.3 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC, 14 Lead SOIC, and 14 Lead PDIP. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout for both channels; 3.3 V and 5 V input logic compatible; Matched propagation delay for both channels; Logic and power ground +/- 5 V offset; Lower di/dt gate driver for better noise immunity; Output source/sink current capability 1.4A/1.8A
DRIVER, MOSFET, HIGH/LOW SIDE, 2183; Device Type:MOSFET; Module Configuration:High Side / Low Side; Peak Output Current:2.3A; Input Delay:180ns; Output Delay:220ns; Supply Voltage Range:10V to 20V; Driver Case Style:DIP; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2183; IC Generic Number:2183; Logic Function Number:2183; No. of Outputs:2; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:1.9A; Output Current + Max:1700mA; Output Sink Current Min:1700mA; Output Source Current Min:1700mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:DIP; Power Dissipation Pd:1W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:Through Hole; Voltage Vcc Max:25V; Voltage Vcc Min:10V

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IR2183
  • IR2183PBF.
  • SP001536970

Technical Specifications

Physical
Case/PackageDIP
MountThrough Hole
Number of Pins8
Technical
Ambient Temperature Range High125 °C
Channel TypeIndependent
Fall Time20 ns
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Output Current2.3 A
Max Power Dissipation1 W
Max Supply Current1.6 mA
Max Supply Voltage20 V
Min Operating Temperature-40 °C
Min Supply Voltage10 V
Nominal Supply Current1 mA
Number of Channels2
Number of Drivers2
Number of Outputs2
Output Current1.9 A
Output Voltage20 V
Package Quantity3000
PackagingBulk
Power Dissipation1 W
Propagation Delay330 ns
Release Time220 ns
Rise Time40 ns
Schedule B8542310000
Turn-Off Delay Time220 ns
Turn-On Delay Time35 ns
Dimensions
Height5.33 mm
Length10.8966 mm
Width7.11 mm

Documents

Download datasheets and manufacturer documentation for Infineon IR2183PBF.

SHENGYU ELECTRONICS
Datasheet22 pages18 years ago
TME
Datasheet22 pages18 years ago
iiiC
Datasheet22 pages18 years ago

Compliance

Environmental Classification
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page10 years ago
Reach Statement6 pages10 years ago