Infineon IR2108SPBF

600 V half-bridge gate driver IC with shoot through protection, SOIC 8N, RoHS

MOSFET DRVR 600V 0.35A 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 8-Pin SOIC - Rail/Tube

IR2108SPBF Series 20 V 200 mA Surface Mount Half-Bridge Driver - SOIC-8

MOSFET/IGBT DRIV, HALF BRIDGE, NSOIC-8; Driver Configuration:Half Bridge; Peak Output Current:350mA; Supply Voltage Min:10V; Max:20V;

MOSFET Driver IC; Device Type:MOSFET; Supply Voltage Min:10V; Supply Voltage Max:25V; Termination Type:SMD; Package/Case:8-SOIC; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; Delay Matching:60ns; Fall Time, tf:50ns ;RoHS Compliant: Yes

DRIVER, MOSFET/IGBT, HALF BRIDGE, SMD; Driver IC Type:MOSFET; No. of Outputs:2; Voltage, Output:620V; Output Current:200mA; Power Dissipation Pd:0.625W; Voltage, Supply Min:10V; Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; Base Number:2108; IC Generic Number:2108; Logic Function Number:2108; Temp, Op. Max:125°C; Temp, Op. Min:-40°C; Termination Type:SMD; Voltage, Offset:600V; Voltage, Output Max:20V; Voltage, Output Min:10V; Voltage, Supply Max:20V; Min Output Sink Current:250mA; Min Output Source Current:120mA; Time, t Off:200ns; Time, t On:220ns

600 V Half Bridge Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout for both channels; 3.3 V, 5 V, and 15 V logic input compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; High side output in phase with HIN input; Low side output out of phase with LIN input; Logic and power ground + /- 5 V offset; Internal 540ns dead-time; Lower di/dt gate driver for better noise immunity