Infineon IPD60R950C6ATMA1
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 726-IPD60R950C6ATMA1 | 2,500 | 1 | Tape & Reel | 20h | ||||||||
| IPD60R950C6ATMA1 | 4,720 | 1d | ||||||||||
| 85X6033 | 325 | 1 | 1d | |||||||||
| IPD60R950C6ATMA1 | 523 | 38 | Bulk | >1wk | ||||||||
| IPD60R950C6ATMA1CT-ND | 4,797 | 1 | Cut Tape | 1d |
Technical Specifications
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Weight3.949996 g
Technical
Continuous Drain Current (ID)4.4 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance950 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance280 pF
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Max Power Dissipation37 W
Min Operating Temperature-55 °C
Number of Channels1
On-State Resistance950 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation37 W
Rds On Max950 mΩ
Rise Time8 ns
Schedule B8541290080
Turn-Off Delay Time60 ns
Turn-On Delay Time10 ns
Inventory History
3 month trend: -75.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IPD60R950C6ATMA1.
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Descriptions
Descriptions of Infineon IPD60R950C6ATMA1 provided by its distributors.
Single N-Channel 600 V 950 mOhm 13 nC CoolMOS Power Mosfet - TO-252-3
INFINEON IPD60R950C6 Power MOSFET, N Channel, 4.4 A, 600 V, 0.86 ohm, 10 V, 3 V
Trans MOSFET N-CH 600V 4.4A 3-Pin(2+Tab) DPAK T/R / Metal Oxide Semiconductor Field Effect Transistor | MOSFET N-CH 600V 4.4A TO252
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
Infineon SCT
Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:5.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:48W; No. of Pins:3Pins RoHS Compliant: Yes
MOSFET,N CH,600V,8.1A,TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.86ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:37W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.4A; Power Dissipation Pd:37W; Voltage Vgs Max:30V
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -75.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Weight3.949996 g
Technical
Continuous Drain Current (ID)4.4 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance950 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance280 pF
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Max Power Dissipation37 W
Min Operating Temperature-55 °C
Number of Channels1
On-State Resistance950 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation37 W
Rds On Max950 mΩ
Rise Time8 ns
Schedule B8541290080
Turn-Off Delay Time60 ns
Turn-On Delay Time10 ns