Infineon IPD50R650CEAUMA1

Mosfet Transistor, N Channel, 6.1 A, 500 V, 0.59 Ohm, 13 V, 3 V Rohs Compliant: Yes
Production
In Stock

Price and Stock

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Technical Specifications

Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Weight3.949996 g
Technical
Continuous Drain Current (ID)6.1 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance650 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance342 pF
Max Operating Temperature150 °C
Max Power Dissipation47 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance650 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation47 W
Rds On Max650 mΩ
Rise Time5 ns
Turn-Off Delay Time27 ns
Turn-On Delay Time6 ns

Documents

Download datasheets and manufacturer documentation for Infineon IPD50R650CEAUMA1.

TME
Datasheet14 pages0 years ago
element14 APAC
Datasheet14 pages11 years ago
Farnell
Datasheet13 pages0 years ago

Inventory History

3 month trend:
+43.26%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for Infineon IPD50R650CEAUMA1.

Related Parts

Descriptions

Descriptions of Infineon IPD50R650CEAUMA1 provided by its distributors.

Mosfet Transistor, N Channel, 6.1 A, 500 V, 0.59 Ohm, 13 V, 3 V Rohs Compliant: Yes
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 0.022uF 25volt X7R +/-5%
MOSFET, N-CH, 500V, 6.1A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.1A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.59ohm; Rds(on) Test Voltage Vgs: 13V; Threshold Voltage Vgs: 3V; P
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO252-3, RoHS
Infineon SCT
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IPD50R650CE
  • IPD50R650CEATMA1
  • IPD50R650CEBTMA1
  • SP001117708
  • SP001396796

Technical Specifications

Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Weight3.949996 g
Technical
Continuous Drain Current (ID)6.1 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance650 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance342 pF
Max Operating Temperature150 °C
Max Power Dissipation47 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance650 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation47 W
Rds On Max650 mΩ
Rise Time5 ns
Turn-Off Delay Time27 ns
Turn-On Delay Time6 ns

Documents

Download datasheets and manufacturer documentation for Infineon IPD50R650CEAUMA1.

TME
Datasheet14 pages0 years ago
element14 APAC
Datasheet14 pages11 years ago
Farnell
Datasheet13 pages0 years ago

Compliance

Environmental Classification
RoHSCompliant
Compliance Statements