Infineon IPD30N06S2L23ATMA3
Production
In StockPrice and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 726-IPD30N06S2L23AT3 | 65,966 | 1 | Tape & Reel | 13h | ||||||||
| ST64838401 | 2,500 | 1 | 21h | |||||||||
| IPD30N06S2L23ATMA3 | 434,109 | 1d | ||||||||||
| 12AC9710 | 2,180 | 1 | 1d | |||||||||
| IPD30N06S2L23ATMA3CT-ND | 14,117 | 1 | Cut Tape | 2d |
Technical Specifications
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)30 A
Drain to Source Resistance15.9 mΩ
Drain to Source Voltage (Vdss)55 V
Input Capacitance1.091 nF
Max Dual Supply Voltage55 V
Max Operating Temperature175 °C
Max Power Dissipation100 W
Min Operating Temperature-55 °C
On-State Resistance23 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation100 W
Rds On Max23 mΩ
Schedule B8541290080
Inventory History
3 month trend: +89.02%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon IPD30N06S2L23ATMA3.
Related Parts
InfineonIRFR5305PBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;D-Pak (TO-252AA);PD 110W
InfineonIRFR5305TRPBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;D-Pak (TO-252AA);PD 110W
InfineonIRFR5305TRLPBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;D-Pak (TO-252AA);PD 110W
Descriptions
Descriptions of Infineon IPD30N06S2L23ATMA3 provided by its distributors.
Mosfet Transistor, N Channel, 30 A, 55 V, 0.0159 Ohm, 10 V, 1.6 V
N-Channel 55 V 23 mOhm 42 nC SMT OptiMOS® Power-Transistor - PG-TO252-3-11
Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R / OptiMOS Power-Transistor
55V, N-Ch, 23 mΩ max, Automotive MOSFET, DPAK, OptiMOS™, PG-TO252-3, RoHS
Infineon SCT
OPTIMOS POWER-TRANSISTOR Power Field-Effect Transistor, 30A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N CH, 55V, 30A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0159ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; P
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +89.02%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)30 A
Drain to Source Resistance15.9 mΩ
Drain to Source Voltage (Vdss)55 V
Input Capacitance1.091 nF
Max Dual Supply Voltage55 V
Max Operating Temperature175 °C
Max Power Dissipation100 W
Min Operating Temperature-55 °C
On-State Resistance23 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation100 W
Rds On Max23 mΩ
Schedule B8541290080