onsemi HGTP7N60B3D

Trans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220AB Rail

RAIL / 600V,14A,UFS SERIES NCH IGBT W/ANTI-PARALLEL HYPERFAST DIODE

The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C at rated current. The IGBT is developmental type TA49190. The diode used in anti-parallel with the IGBT is the RHRD660 (TA49057).The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.