onsemi HGTD1N120BNS9A
Production
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2.5 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current5.3 A
Current Rating5.3 A
Element ConfigurationSingle
Max Breakdown Voltage1.2 kV
Max Collector Current5.3 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Operating Temperature-55 °C
PackagingTape & Reel (TR)
Power Dissipation60 W
Schedule B8541290080
Turn-Off Delay Time67 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)1.2 kV
Dimensions
Height2.517 mm
Inventory History
3 month trend: -56.54%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for onsemi HGTD1N120BNS9A.
Farnell
Fairchild Semiconductor
element14 APAC
Arrow Electronics
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi HGTD1N120BNS9A.
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Descriptions
Descriptions of onsemi HGTD1N120BNS9A provided by its distributors.
Trans IGBT Chip N=-CH 1200V 5.3A 60000mW 3-Pin(2+Tab) DPAK T/R
HGTD1N120BNS9A Series N-Channel 1200 V 5.3 A Surface Mount IGBT - TO-252AA
5.3A, 1200V, NPT SERIES N-CHANNEL IGBT Insulated Gate Bipolar Transistor, 5.3A I(C), 1200V V(BR)CES, N-Channel, TO-252AA
IGBT, SINGLE, 1.2KV, 5.3A, TO-252AA-3; DC Collector Current:5.3A; Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:60W;
Transistor; Transistor Type:IGBT; DC Collector Current:5.3A; Collector Emitter Voltage, Vces:1200V; Power Dissipation, Pd:60W; Collector Emitter Voltage, V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; No. of Pins:3 ;RoHS Compliant: Yes
HGTD1N120BNS9A is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: -56.54%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Weight260.37 mg
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2.5 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current5.3 A
Current Rating5.3 A
Element ConfigurationSingle
Max Breakdown Voltage1.2 kV
Max Collector Current5.3 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Operating Temperature-55 °C
PackagingTape & Reel (TR)
Power Dissipation60 W
Schedule B8541290080
Turn-Off Delay Time67 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)1.2 kV
Dimensions
Height2.517 mm
Documents
Download datasheets and manufacturer documentation for onsemi HGTD1N120BNS9A.
Farnell
Fairchild Semiconductor
element14 APAC
Arrow Electronics
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements