GeneSiC Semiconductor GA05JT12-263
Technical Specifications
Physical
Case/PackageTO-263-7
MountSurface Mount
Number of Pins7
Technical
Continuous Drain Current (ID)15 A
Current Rating15 A
Drain to Source Voltage (Vdss)1.2 kV
Max Operating Temperature175 °C
Max Power Dissipation106 W
Max Repetitive Reverse Voltage (Vrrm)1.2 kV
Min Operating Temperature-55 °C
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for GeneSiC Semiconductor GA05JT12-263.
Descriptions
Descriptions of GeneSiC Semiconductor GA05JT12-263 provided by its distributors.
GENESIC SEMICONDUCTOR GA05JT12-263SIC JUNCTION TRANSISTOR, 1.2KV, 5A, TO-263
Trans JFET N-CH 1200V 5A SiC Automotive 4-Pin(3+Tab) TO-263
SiC Junction Transistor 1200V 180mΩ TO-263-7
Sic Junction Transistor, 1.2Kv, 5A, To-263; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:3Pins; Rds(On) Test Voltage:-; Power Dissipation:58W Rohs Compliant: Yes |Genesic Semiconductor GA05JT12-263
Manufacturer Aliases
GeneSiC Semiconductor has several brands around the world that distributors may use as alternate names. GeneSiC Semiconductor may also be known as the following names:
- GENESIC
- GENESIC SEMI
- GeneSiC Semiconductor Inc
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-263-7
MountSurface Mount
Number of Pins7
Technical
Continuous Drain Current (ID)15 A
Current Rating15 A
Drain to Source Voltage (Vdss)1.2 kV
Max Operating Temperature175 °C
Max Power Dissipation106 W
Max Repetitive Reverse Voltage (Vrrm)1.2 kV
Min Operating Temperature-55 °C