onsemi FQP7P06
EOL
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Weight1.8 g
Technical
Continuous Drain Current (ID)7 A
Current Rating-7 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance410 mΩ
Drain to Source Voltage (Vdss)-60 V
Dual Supply Voltage-60 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance295 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
Power Dissipation45 W
Rds On Max410 mΩ
Resistance410 MΩ
Rise Time50 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time7.5 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)-60 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm
Inventory History
3 month trend: +0.95%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for onsemi FQP7P06.
TME
Fairchild Semiconductor
Upverter
Jameco
iiiC
Supply Chain
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FQP7P06.
Related Parts
Infineon SPP08P06P
Trans MOSFET P-CH 60V 8.8A 3-Pin(3+Tab) TO-220 / SIPMOS Power-Transistor
onsemi FQP13N06
MOSFET N-CH 60V 13A TO-220
Vishay IRF9Z14PBF
Single P-Channel 60 V 0.5 Ohms Flange Mount Power Mosfet - TO-220AB
Descriptions
Descriptions of onsemi FQP7P06 provided by its distributors.
Power MOSFET, P-Channel, QFET®, -60 V, -7 A, 410 mΩ, TO-220
Trans MOSFET P-CH 60V 7A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
P-Channel 60 V 7 A 0.41 Ohm Mosfet - TO-220
60V P-CHANNEL MOSFET Power Field-Effect Transistor, 7A I(D), 60V, 0.41ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):410mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:45W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:-7A; Current Temperature:25°C; Device Marking:FQP7P06; External Depth:29.03mm; External Length / Height:4.5mm; External Width:9.9mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:410mohm; Package / Case:TO-220; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Pulse Current Idm:28A; Termination Type:Through Hole; Voltage Vds Typ:-60V; Voltage Vgs Max:-25V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-4V
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +0.95%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Weight1.8 g
Technical
Continuous Drain Current (ID)7 A
Current Rating-7 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance410 mΩ
Drain to Source Voltage (Vdss)-60 V
Dual Supply Voltage-60 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance295 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
Power Dissipation45 W
Rds On Max410 mΩ
Resistance410 MΩ
Rise Time50 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time7.5 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)-60 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm
Documents
Download datasheets and manufacturer documentation for onsemi FQP7P06.
TME
Fairchild Semiconductor
Upverter
Jameco
iiiC
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements