onsemi FQP3P50
EOL
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight1.8 g
Technical
Continuous Drain Current (ID)2.7 A
Current Rating-2.7 A
Drain to Source Breakdown Voltage-500 V
Drain to Source Resistance4.9 Ω
Drain to Source Voltage (Vdss)-500 V
Dual Supply Voltage-500 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance660 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation85 W
Min Operating Temperature-55 °C
Nominal Vgs-5 V
Number of Channels1
Number of Elements1
Power Dissipation85 W
Rds On Max4.9 Ω
Resistance4.9 Ω
Rise Time56 ns
Schedule B8541290080
Turn-Off Delay Time35 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)-500 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for onsemi FQP3P50.
TME
Fairchild Semiconductor
Jameco
iiiC
Supply Chain
Lifecycle StatusEOL (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FQP3P50.
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Descriptions
Descriptions of onsemi FQP3P50 provided by its distributors.
Power MOSFET, P-Channel, QFET®, -500 V, -2.7 A, 4.9 Ω, TO-220
Transistor, P-channel, QFET MOSFET, -500V, -2.7A, 4.9 Ohm, -55 to 150C, TO-220 | ON Semiconductor FQP3P50
Trans MOSFET P-CH 500V 2.7A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
MOSFET P-Channel 500V 2.7A (Tc) 85W (Tc) Through Hole TO-220-3
P-Channel 500 V 4.9 Ohm Flange Mount Mosfet - TO-220
MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:500V; On Resistance Rds(on):4.9ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-5V; Power Dissipation Pd:85W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:-2.7A; On State Resistance Max:4.9ohm; Package / Case:TO-220; Power Dissipation Pd:85W; Power Dissipation Pd:85W; Pulse Current Idm:10.8A; Termination Type:Through Hole; Voltage Vds Typ:-500V; Voltage Vgs Max:-30V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-5V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight1.8 g
Technical
Continuous Drain Current (ID)2.7 A
Current Rating-2.7 A
Drain to Source Breakdown Voltage-500 V
Drain to Source Resistance4.9 Ω
Drain to Source Voltage (Vdss)-500 V
Dual Supply Voltage-500 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance660 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation85 W
Min Operating Temperature-55 °C
Nominal Vgs-5 V
Number of Channels1
Number of Elements1
Power Dissipation85 W
Rds On Max4.9 Ω
Resistance4.9 Ω
Rise Time56 ns
Schedule B8541290080
Turn-Off Delay Time35 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)-500 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm
Documents
Download datasheets and manufacturer documentation for onsemi FQP3P50.
TME
Fairchild Semiconductor
Jameco
iiiC
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements