onsemi FQP30N06

Power MOSFET, N-Channel, QFET®, 60 V, 30 A, 40 mΩ, TO-220
EOL

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight1.8 g
Technical
Continuous Drain Current (ID)30 A
Current Rating30 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance31 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance945 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation79 W
Rds On Max40 mΩ
Resistance40 MΩ
Rise Time85 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time35 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)60 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm

Documents

Download datasheets and manufacturer documentation for onsemi FQP30N06.

Future Electronics
Datasheet0 pages0 years ago
Fairchild Semiconductor
Datasheet8 pages21 years ago
Technical Drawing1 page10 years ago
Technical Drawing1 page14 years ago
Technical Drawing1 page16 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Newark
Datasheet8 pages10 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
Upverter
Technical Drawing1 page4 years ago
Jameco
Datasheet9 pages16 years ago
iiiC
Datasheet8 pages21 years ago

Inventory History

3 month trend:
-12.56%

Supply Chain

Lifecycle StatusEOL (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi FQP30N06.

Related Parts

Descriptions

Descriptions of onsemi FQP30N06 provided by its distributors.

Power MOSFET, N-Channel, QFET®, 60 V, 30 A, 40 mΩ, TO-220
Trans MOSFET N-CH 60V 30A 3-Pin(3+Tab) TO-220AB Rail
N-Channel 60 V 40 mOhm Flange Mount Mosfet - TO-220
MOSFET, N-CH, 60V, 30A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.031ohm; Available until stocks are exhausted Alternative available
Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • FQP30N06.

Technical Specifications

Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Weight1.8 g
Technical
Continuous Drain Current (ID)30 A
Current Rating30 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance31 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance945 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation79 W
Rds On Max40 mΩ
Resistance40 MΩ
Rise Time85 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time35 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)60 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm

Documents

Download datasheets and manufacturer documentation for onsemi FQP30N06.

Future Electronics
Datasheet0 pages0 years ago
Fairchild Semiconductor
Datasheet8 pages21 years ago
Technical Drawing1 page10 years ago
Technical Drawing1 page14 years ago
Technical Drawing1 page16 years ago
onsemi
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Newark
Datasheet8 pages10 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
element14 APAC
Datasheet0 pages0 years ago
Upverter
Technical Drawing1 page4 years ago
Jameco
Datasheet9 pages16 years ago
iiiC
Datasheet8 pages21 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement3 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page12 years ago
Rohs Statement1 page10 years ago