onsemi FDS8949
Production
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight187 mg
Technical
Continuous Drain Current (ID)6 A
Current Rating6 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance21 mΩ
Drain to Source Voltage (Vdss)40 V
Dual Supply Voltage40 V
Element ConfigurationDual
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance955 pF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Nominal Vgs1.9 V
Number of Elements2
PackagingCut Tape
Power Dissipation2 W
Rds On Max29 mΩ
Resistance29 mΩ
Rise Time5 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1.9 V
Turn-Off Delay Time23 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)40 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Inventory History
3 month trend: -5.10%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for onsemi FDS8949.
Upverter
Fairchild Semiconductor
element14 APAC
iiiC
TME
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDS8949.
Related Parts
onsemi FDS8449
N-Channel 40 V 29 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
onsemi FDS4897C
Trans MOSFET N/P-CH 40V 6.2A/4.4A 8-Pin SOIC T/R / MOSFET N/P-CH 40V 8-SOIC
onsemi FDS4897AC
MOSFET Transistor, N and P Channel, 6.1 A, 40 V, 0.02 ohm, 10 V, 2 V
Descriptions
Descriptions of onsemi FDS8949 provided by its distributors.
Dual N-Channel PowerTrench® MOSFET, Logic Level, 40V, 6A, 29mΩ
Trans MOSFET N-CH 40V 6A 8-Pin SOIC T/R / MOSFET 2N-CH 40V 6A 8-SOIC
ON SEMICONDUCTOR - FDS8949 - DUAL N CHANNEL MOSFET, 40V, SOIC, FULL REEL
40V, 6A, 29M OHM, DUAL N-CHANNEL LOGIC LEVEL POWERTRENCH MOSFET Power Field-Effect Transistor, 6A I(D), 40V, 0.043ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:6A; On Resistance, Rds(on):0.029ohm; Rds(on) Test Voltage, Vgs:1.9V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 6 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 36 / Gate-Source Voltage V = 20 / Fall Time ns = 6 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 37 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOIC / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 900
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: -5.10%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight187 mg
Technical
Continuous Drain Current (ID)6 A
Current Rating6 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance21 mΩ
Drain to Source Voltage (Vdss)40 V
Dual Supply Voltage40 V
Element ConfigurationDual
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance955 pF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Nominal Vgs1.9 V
Number of Elements2
PackagingCut Tape
Power Dissipation2 W
Rds On Max29 mΩ
Resistance29 mΩ
Rise Time5 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1.9 V
Turn-Off Delay Time23 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)40 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Documents
Download datasheets and manufacturer documentation for onsemi FDS8949.
Upverter
Fairchild Semiconductor
element14 APAC
iiiC
TME
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements