onsemi FDP8878
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Weight1.8 g
Technical
Continuous Drain Current (ID)40 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance19 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time35.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.235 nF
Max Operating Temperature175 °C
Max Power Dissipation40.5 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation40.5 W
Rds On Max15 mΩ
Rise Time244 ns
Turn-Off Delay Time14.8 ns
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for onsemi FDP8878.
Fairchild Semiconductor
iiiC
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDP8878.
Descriptions
Descriptions of onsemi FDP8878 provided by its distributors.
Transistor,Mosfet,N-Channel,30V V(Br)Dss,40A I(D),To-220Ab
30V,40A,15 OHMS,NCH,LOGIC LEVEL ,POWER TRENCH MOSFET
MOSFETs 30V N-Ch LogicLevel PowerTrench MOSFET
SMALL SIGNAL BIPOLAR TRANSISTOR
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Weight1.8 g
Technical
Continuous Drain Current (ID)40 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance19 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time35.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.235 nF
Max Operating Temperature175 °C
Max Power Dissipation40.5 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation40.5 W
Rds On Max15 mΩ
Rise Time244 ns
Turn-Off Delay Time14.8 ns
Documents
Download datasheets and manufacturer documentation for onsemi FDP8878.
Fairchild Semiconductor
iiiC