onsemi FDN5618P
Production
In StockTechnical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Continuous Drain Current (ID)1.25 A
Current Rating-1.25 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance170 mΩ
Drain to Source Voltage (Vdss)-60 V
Dual Supply Voltage-60 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance430 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
Nominal Vgs20 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Rds On Max170 mΩ
Resistance170 mΩ
Rise Time8 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage-1.6 V
Turn-Off Delay Time16.5 ns
Turn-On Delay Time6.5 ns
Voltage Rating (DC)-60 V
Dimensions
Height940 µm
Length2.92 mm
Width1.4 mm
Inventory History
3 month trend: -7.42%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for onsemi FDN5618P.
element14 APAC
Newark
Megastar
Future Electronics
TME
Jameco
Fairchild Semiconductor
iiiC
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDN5618P.
Related Parts
onsemiFDN5630
N-Channel 60 V 0.5 W 100 mOhm 10 nC SMT PowerTrench Mosfet - SSOT-3
Diodes Inc.DMN6140LQ-7
N-Channel 60 V 140 mOhm 806 nC SMT Enhancement Mode Mosfet - SOT-23
Diodes Inc.DMN6140L-13
DMN6140L Series 60 V 1.6 A N-Channel Enhancement Mode Mosfet - SOT-23-3
Descriptions
Descriptions of onsemi FDN5618P provided by its distributors.
P-Channel PowerTrench® MOSFET, 60V, -1.25A, 170mΩ
P-Channel 60 V 0.170 Ohm Logic Level PowerTrench Mosfet SSOT-3
This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:1.2A; On Resistance, Rds(on):0.17ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:SuperSOT-3 ;RoHS Compliant: Yes
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -1.25 / Drain-Source Voltage (Vds) V = -60 / ON Resistance (Rds(on)) mOhm = 230 / Gate-Source Voltage V = 20 / Fall Time ns = 8 / Rise Time ns = 16 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.25A; Drain Source Voltage Vds:60V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:20V; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.2A; Current Temperature:25°C; Device Marking:618; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:618; Tape Width:8mm; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:-60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-3V
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: -7.42%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Continuous Drain Current (ID)1.25 A
Current Rating-1.25 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance170 mΩ
Drain to Source Voltage (Vdss)-60 V
Dual Supply Voltage-60 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance430 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
Nominal Vgs20 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Rds On Max170 mΩ
Resistance170 mΩ
Rise Time8 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage-1.6 V
Turn-Off Delay Time16.5 ns
Turn-On Delay Time6.5 ns
Voltage Rating (DC)-60 V
Dimensions
Height940 µm
Length2.92 mm
Width1.4 mm
Documents
Download datasheets and manufacturer documentation for onsemi FDN5618P.
element14 APAC
Newark
Megastar
Future Electronics
TME
Jameco
Fairchild Semiconductor
iiiC
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements