onsemi FDMS86103L
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDMS86103LCT-ND | 4,225 | 1 | Cut Tape | 1d | ||||||||
| FDMS86103L | 2,703 | 5 | 23h | |||||||||
| FDMS86103L | 2,703 | 1 | Cut Tape | 1d | ||||||||
| 512-FDMS86103L | 40,075 | 1 | Tape & Reel | 19h | ||||||||
| C1S226600779968 | 3,000 | 1 | Cut Tape | 1d |
Technical Specifications
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight68.1 mg
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance6.4 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.71 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation2.5 W
Rds On Max8 mΩ
Rise Time7.2 ns
Schedule B8541290080
Threshold Voltage1.9 V
Turn-Off Delay Time35 ns
Turn-On Delay Time13 ns
Dimensions
Height1.05 mm
Length5 mm
Width6.15 mm
Inventory History
3 month trend: +5.52%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for onsemi FDMS86103L.
Future Electronics
Farnell
Upverter
Newark
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDMS86103L.
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Descriptions
Descriptions of onsemi FDMS86103L provided by its distributors.
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 81A, 8mΩ
In a Pack of 3, N-Channel MOSFET, 49 A, 100 V, 8-Pin Power 56 ON Semiconductor FDMS86103L
FDMS86103L Series 100 V 81 A 8 mOhm N-Ch PowerTrench® MOSFET - Power56
Power Field-Effect Transistor, 12A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
MOSFET, N CH, 100V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0064ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +5.52%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight68.1 mg
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance6.4 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.71 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation2.5 W
Rds On Max8 mΩ
Rise Time7.2 ns
Schedule B8541290080
Threshold Voltage1.9 V
Turn-Off Delay Time35 ns
Turn-On Delay Time13 ns
Dimensions
Height1.05 mm
Length5 mm
Width6.15 mm
Documents
Download datasheets and manufacturer documentation for onsemi FDMS86103L.
Future Electronics
Farnell
Upverter
Newark
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements